Inventor
YOU YOUNG-SUB
KR22 patents
⚠️ This page may combine multiple inventors who share the name “YOU YOUNG-SUB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS6797561B2Sep 28, 2004
Method of fabricating a capacitor of a semiconductor device
SAMSUNG ELECTRONICS CO LTD26 citations92
US7803679B2Sep 28, 2010
Method of forming a vertical diode and method of manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US8970039B2Mar 3, 2015
Integrated circuit devices including electrode support structures and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US7563677B2Jul 21, 2009
Recessed gate electrode and method of forming the same and semiconductor device having the recessed gate electrode and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations82
US7741222B2Jun 22, 2010
Etch stop structure and method of manufacture, and semiconductor device and method of manufacture
SAMSUNG ELECTRONICS CO LTD17 citations81
US7077929B2Jul 18, 2006
Apparatus for manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations74
US7524747B2Apr 28, 2009
Floating gate memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US7410869B2Aug 12, 2008
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations73
US7041558B2May 9, 2006
Floating gate memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US6706613B2Mar 16, 2004
Methods for manufacturing stacked gates including oxide/nitride/oxide (ONO) interlayer dielectrics using pre-annealing and/or post-annealing in nitrogen
SAMSUNG ELECTRONICS CO LTD12 citations71
US7521375B2Apr 21, 2009
Method of forming an oxinitride layer
SAMSUNG ELECTRONICS CO LTD2 citations62
US7223657B2May 29, 2007
Methods of fabricating flash memory devices with floating gates that have reduced seams
SAMSUNG ELECTRONICS CO LTD3 citations62
US7902059B2Mar 8, 2011
Methods of forming void-free layers in openings of semiconductor substrates
SAMSUNG ELECTRONICS CO LTD3 citations61
US7736963B2Jun 15, 2010
Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory device
SAMSUNG ELECTRONICS CO LTD5 citations61
US7459364B2Dec 2, 2008
Methods of forming self-aligned floating gates using multi-etching
SAMSUNG ELECTRONICS CO LTD4 citations61
US7189661B2Mar 13, 2007
Method of forming silicon oxynitride layer in semiconductor device and apparatus of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations61
US6913979B2Jul 5, 2005
Method of manufacturing a metal oxide semiconductor transistor
SAMSUNG ELECTRONICS CO LTD2 citations59
US7297620B2Nov 20, 2007
Method of forming an oxide layer including increasing the temperature during oxidation
SAMSUNG ELECTRONICS CO LTD0 citations52
US7629217B2Dec 8, 2009
Methods of forming void-free layers in openings of semiconductor substrates
SAMSUNG ELECTRONICS CO LTD0 citations51
US7160776B2Jan 9, 2007
Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the same
SAMSUNG ELECTRONICS CO LTD0 citations51