P

Inventor

YOU YOUNG-SUB

KR22 patents
⚠️ This page may combine multiple inventors who share the name “YOU YOUNG-SUB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

20 patents
US6797561B2Sep 28, 2004

Method of fabricating a capacitor of a semiconductor device

SAMSUNG ELECTRONICS CO LTD26 citations92
US7803679B2Sep 28, 2010

Method of forming a vertical diode and method of manufacturing a semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US8970039B2Mar 3, 2015

Integrated circuit devices including electrode support structures and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations83
US7563677B2Jul 21, 2009

Recessed gate electrode and method of forming the same and semiconductor device having the recessed gate electrode and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD11 citations82
US7741222B2Jun 22, 2010

Etch stop structure and method of manufacture, and semiconductor device and method of manufacture

SAMSUNG ELECTRONICS CO LTD17 citations81
US7077929B2Jul 18, 2006

Apparatus for manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD8 citations74
US7524747B2Apr 28, 2009

Floating gate memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations73
US7410869B2Aug 12, 2008

Method of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations73
US7041558B2May 9, 2006

Floating gate memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations73
US6706613B2Mar 16, 2004

Methods for manufacturing stacked gates including oxide/nitride/oxide (ONO) interlayer dielectrics using pre-annealing and/or post-annealing in nitrogen

SAMSUNG ELECTRONICS CO LTD12 citations71
US7521375B2Apr 21, 2009

Method of forming an oxinitride layer

SAMSUNG ELECTRONICS CO LTD2 citations62
US7223657B2May 29, 2007

Methods of fabricating flash memory devices with floating gates that have reduced seams

SAMSUNG ELECTRONICS CO LTD3 citations62
US7902059B2Mar 8, 2011

Methods of forming void-free layers in openings of semiconductor substrates

SAMSUNG ELECTRONICS CO LTD3 citations61
US7736963B2Jun 15, 2010

Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory device

SAMSUNG ELECTRONICS CO LTD5 citations61
US7459364B2Dec 2, 2008

Methods of forming self-aligned floating gates using multi-etching

SAMSUNG ELECTRONICS CO LTD4 citations61
US7189661B2Mar 13, 2007

Method of forming silicon oxynitride layer in semiconductor device and apparatus of forming the same

SAMSUNG ELECTRONICS CO LTD2 citations61
US6913979B2Jul 5, 2005

Method of manufacturing a metal oxide semiconductor transistor

SAMSUNG ELECTRONICS CO LTD2 citations59
US7297620B2Nov 20, 2007

Method of forming an oxide layer including increasing the temperature during oxidation

SAMSUNG ELECTRONICS CO LTD0 citations52
US7629217B2Dec 8, 2009

Methods of forming void-free layers in openings of semiconductor substrates

SAMSUNG ELECTRONICS CO LTD0 citations51
US7160776B2Jan 9, 2007

Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the same

SAMSUNG ELECTRONICS CO LTD0 citations51

PARK SANG-JIN

1 patent

KUH BONG JIN

1 patent