Inventor

LEVIN SHARON

IL16 patents

⚠️ This page may combine multiple inventors who share the name “LEVIN SHARON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOWER SEMICONDUCTOR LTD

14 patents

US7575977B2Aug 18, 2009

Self-aligned LDMOS fabrication method integrated deep-sub-micron VLSI process, using a self-aligned lithography etches and implant process

TOWER SEMICONDUCTOR LTD38 citations89

US7544557B2Jun 9, 2009

Gate defined Schottky diode

TOWER SEMICONDUCTOR LTD18 citations82

US9484454B2Nov 1, 2016

Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure

TOWER SEMICONDUCTOR LTD11 citations80

US9105712B1Aug 11, 2015

Double RESURF LDMOS with separately patterned P+ and N+ buried layers formed by shared mask

TOWER SEMICONDUCTOR LTD10 citations79

US9728632B2Aug 8, 2017

Deep silicon via as a drain sinker in integrated vertical DMOS transistor

TOWER SEMICONDUCTOR LTD3 citations71

US7485941B2Feb 3, 2009

Cobalt silicide schottky diode on isolated well

TOWER SEMICONDUCTOR LTD4 citations61

US10217826B2Feb 26, 2019

Apparatus of a metal-oxide-semiconductor (MOS) transistor including a multi-split gate

TOWER SEMICONDUCTOR LTD1 citations60

US7368760B2May 6, 2008

Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure

TOWER SEMICONDUCTOR LTD1 citations48

US9640607B2May 2, 2017

Die including a high voltage capacitor

TOWER SEMICONDUCTOR LTD0 citations40

US9461039B2Oct 4, 2016

Die including a Schottky diode

TOWER SEMICONDUCTOR LTD0 citations36

US10522388B1Dec 31, 2019

Method of forming high-voltage silicon-on-insulator device with diode connection to handle layer

TOWER SEMICONDUCTOR LTD0 citations27

LEVIN SHARON

2 patents

US8921173B2Dec 30, 2014

Deep silicon via as a drain sinker in integrated vertical DMOS transistor

LEVIN SHARON7 citations80

US9330979B2May 3, 2016

LDMOS transistor having elevated field oxide bumps and method of making same

LEVIN SHARON3 citations64

LEVIN SHARON

TOWER SEMICONDUCTOR LTD

Self-aligned LDMOS fabrication method integrated deep-sub-micron VLSI process, using a self-aligned lithography etches and implant process

Gate defined Schottky diode

Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure

Double RESURF LDMOS with separately patterned P+ and N+ buried layers formed by shared mask

Deep silicon via as a drain sinker in integrated vertical DMOS transistor

Cobalt silicide schottky diode on isolated well

Apparatus of a metal-oxide-semiconductor (MOS) transistor including a multi-split gate

Low parasitic capacitance Schottky diode

Semiconductor die with a metal via

LDMOS device having a low angle sloped oxide

Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure

Die including a high voltage capacitor

Die including a Schottky diode

Method of forming high-voltage silicon-on-insulator device with diode connection to handle layer

LEVIN SHARON

Deep silicon via as a drain sinker in integrated vertical DMOS transistor

LDMOS transistor having elevated field oxide bumps and method of making same