Inventor
LI JUNG-JUI
TW16 patents
⚠️ This page may combine multiple inventors who share the name “LI JUNG-JUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
15 patentsUS9418994B1Aug 16, 2016
Fin field effect transistor (FinFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD71 citations97
US9818648B2Nov 14, 2017
Method for forming Fin field effect transistor (FinFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10269963B2Apr 23, 2019
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10090396B2Oct 2, 2018
Method for fabricating metal gate devices and resulting structures
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US9660084B2May 23, 2017
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US9673112B2Jun 6, 2017
Method of semiconductor fabrication with height control through active region profile
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11764280B2Sep 19, 2023
Method for fabricating metal gate devices and resulting structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11532748B2Dec 20, 2022
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10790394B2Sep 29, 2020
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US12159916B2Dec 3, 2024
Method for fabricating metal gate devices and resulting structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12100765B2Sep 24, 2024
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10312149B1Jun 4, 2019
Fin field effect transistor (FinFET) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US9978652B2May 22, 2018
Method of semiconductor fabrication with height control through active region profile
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10714587B2Jul 14, 2020
Method for fabricating metal gate devices and resulting structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9704719B2Jul 11, 2017
Systems and methods to mitigate nitride precipitates
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51