Inventor

KUH BONG-JIN

KR36 patents

⚠️ This page may combine multiple inventors who share the name “KUH BONG-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KUH BONG-JIN

SAMSUNG ELECTRONICS CO LTD

Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same

Integrated circuit device including polycrystalline semiconductor film and method of manufacturing the same

Multi-layer phase-changeable memory devices

Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same

Methods of fabricating multi-layer phase-changeable memory devices

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Phase-changeable memory devices including nitrogen and/or silicon dopants

Phase changeable memory devices including nitrogen and/or silicon

Phase-change memory device having a barrier layer and manufacturing method

Semiconductor device having supporter and method of forming the same

Nano-structure semiconductor light emitting device

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Phase-changeable memory devices and methods of forming the same

Semiconductor device having supporter

Integrated circuit devices including electrode support structures and methods of fabricating the same

Phase-change material layer and phase-change memory device including the phase-change material layer

Integrated circuit device including polycrystalline semiconductor film and method of manufacturing the same

Phase-changeable memory devices including an adiabatic layer

Nano-structured semiconductor light-emitting element

Semiconductor devices

Multi-layer phase-changeable memory devices

Methods of manufacturing phase-changeable memory devices including upper and lower electrodes

Phase-changeable memory devices including phase-changeable materials on silicon nitride layers

Semiconductor devices and methods of manufacturing the same

Nonvolatile memory device and method of manufacturing the same

Method of forming a chalcogenide compound target

Methods of forming epitaxial layers

Laser annealing apparatus for semiconductors having multiple laser energy measuring means

Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same

Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same

HA YONG-HO

Methods for manufacturing a phase-change memory device

Methods for manufacturing a phase-change memory device

Methods of forming phase-changeable memory devices including an adiabatic layer

YOON JUN-HO

Method of fabricating semiconductor device

KUH BONG JIN

Method of forming a capacitor and method of manufacturing a semiconductor device using the same

KANG JONG-HOON

Method of forming a thin layer structure