Inventor

YI JI-HYE

KR34 patents

⚠️ This page may combine multiple inventors who share the name “YI JI-HYE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YI JI-HYE

SAMSUNG ELECTRONICS CO LTD

Phase-change memory devices with a self-heater structure

Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same

Method and driver for programming phase change memory cell

Methods for forming phase changeable memory devices

Phase changeable memory cells and methods of forming the same

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Phase-changeable memory devices including nitrogen and/or silicon dopants

Phase changeable memory devices including nitrogen and/or silicon

Method and driver for programming phase change memory cell

Semiconductor memory device having a multiple tunnel junction layer pattern and method of fabricating the same

Multi-gate transistor

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Phase changeable memory device structures

Phase-changeable memory devices and methods of forming the same

Semiconductor memory device having a multiple tunnel junction pattern and method of fabricating the same

Semiconductor device, method for fabricating the same, and memory system including the semiconductor device

Phase-changeable memory devices including an adiabatic layer

Phase changable memory device structures

Method and driver for programming phase change memory cell

Semiconductor memory device having a multiple tunnel junction pattern and method of fabricating the same

Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device

Semiconductor device, method for fabricating the same, and memory system including the semiconductor device

Methods of manufacturing phase-changeable memory devices including upper and lower electrodes

Method of manufacturing a semiconductor device

Semiconductor device including field effect transistor and method of forming the same

Phase-changeable memory devices including phase-changeable materials on silicon nitride layers

Semiconductor memory device having a multiple tunnel junction layer pattern and method of fabricating the same

Methods of fabrication of channel-stressed semiconductor devices

Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device

Phase changeable structure and method of forming the same

KIM MYUNG-SUN

Semiconductor integrated circuit devices having different thickness silicon-germanium layers

Methods of fabricating different thickness silicon-germanium layers on semiconductor integrated circuit devices and semiconductor integrated circuit devices fabricated thereby

Semiconductor device including field effect transistor and method of forming the same

HA YONG-HO

Methods of forming phase-changeable memory devices including an adiabatic layer