Inventor
CHAE BYUNG-GYU
KR22 patents
⚠️ This page may combine multiple inventors who share the name “CHAE BYUNG-GYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOREA ELECTRONICS TELECOMM
15 patentsUS6933553B2Aug 23, 2005
Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor
KOREA ELECTRONICS TELECOMM20 citations92
US7408217B2Aug 5, 2008
Metal-insulator transition switching transistor and method for manufacturing the same
KOREA ELECTRONICS TELECOMM21 citations89
US7489492B2Feb 10, 2009
Abrupt metal-insulator transition device, circuit for removing high-voltage noise using the abrupt metal-insulator transition device, and electrical and/or electronic system comprising the circuit
KOREA ELECTRONICS TELECOMM9 citations84
US7728327B2Jun 1, 2010
2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material
KOREA ELECTRONICS TELECOMM9 citations82
US6987290B2Jan 17, 2006
Current-jump-control circuit including abrupt metal-insulator phase transition device
KOREA ELECTRONICS TELECOMM16 citations81
US8017268B2Sep 13, 2011
Lithium secondary battery including discharge unit
KOREA ELECTRONICS TELECOMM2 citations62
US7944360B2May 17, 2011
Temperature sensor using abrupt metal-insulator transition (MIT) and alarm comprising the temperature sensor
KOREA ELECTRONICS TELECOMM5 citations62
US7791924B2Sep 7, 2010
Memory device using abrupt metal-insulator transition and method of operating the same
KOREA ELECTRONICS TELECOMM2 citations62
US7767501B2Aug 3, 2010
Devices using abrupt metal-insulator transition layer and method of fabricating the device
KOREA ELECTRONICS TELECOMM2 citations61
US7989792B2Aug 2, 2011
Abrupt metal-insulator transition device with parallel MIT material layers
KOREA ELECTRONICS TELECOMM0 citations52
US7911756B2Mar 22, 2011
Low-voltage noise preventing circuit using abrupt metal-insulator transition device
KOREA ELECTRONICS TELECOMM0 citations52
US7911125B2Mar 22, 2011
Electron emission device using abrupt metal-insulator transition and display including the same
KOREA ELECTRONICS TELECOMM0 citations52
US8031021B2Oct 4, 2011
Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit
KOREA ELECTRONICS TELECOMM1 citations51
US7929308B2Apr 19, 2011
Power device package having enhanced heat dissipation
KOREA ELECTRONICS TELECOMM0 citations51
US8031022B2Oct 4, 2011
Oscillation circuit including MIT device and method of adjusting oscillation frequency of the oscillation circuit
KOREA ELECTRONICS TELECOMM0 citations41
ELECTRONICS & TELECOMMUNICATIONS RES INST
4 patentsUS11699242B2Jul 11, 2023
System and method for digital hologram synthesis and process using deep learning
ELECTRONICS & TELECOMMUNICATIONS RES INST2 citations72
US11768463B2Sep 26, 2023
Digital hologram display apparatus and displaying method of digital holographic image
ELECTRONICS & TELECOMMUNICATIONS RES INST1 citations62
US10650555B2May 12, 2020
Imaging system and image reconstruction method using the same
ELECTRONICS & TELECOMMUNICATIONS RES INST1 citations61
US12399355B2Aug 26, 2025
3D optical microscope device of small form factor optical system
ELECTRONICS & TELECOMMUNICATIONS RES INST0 citations60