Inventor

SHIN HEE-JU

KR22 patents

⚠️ This page may combine multiple inventors who share the name “SHIN HEE-JU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHIN HEE-JU

SAMSUNG ELECTRONICS CO LTD

Phase-change material layer and phase-change memory device including the phase-change material layer

Phase-changeable memory device and method of manufacturing the same

Non-volatile memory device

Semiconductor device including spin-orbit torque line and method of operating the same

Magnetoresistive random access memory device and method of manufacturing the same

Semiconductor device including spin-orbit torque line and method of operating the same

Nonvolatile memory device and method of manufacturing the same

Method of forming a chalcogenide compound target

Magnetic memory device and method for fabricating the same

Sputtering apparatus and method for fabricating semiconductor device using the same

Sputtering apparatus and method for fabricating semiconductor device using the same

Semiconductor device having pinned layer with enhanced thermal endurance

Image sensor

HA YONG-HO

Methods for manufacturing a phase-change memory device

Methods for manufacturing a phase-change memory device

JEONG JUN-HO

Methods of forming pattern structures

LIM WOO-CHANG

Magnetic memory layer and magnetic memory device including the same

AN HYEONG-GEUN

Memory cells including resistance variable material patterns of different compositions

SHIN HEE-JU

Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same

KIM YOUNG-HYUN

Magnetic device

PARK JEONG-HEON

Semiconductor device having pinned layer with enhanced thermal endurance

AHN DONG-HO

Non-volatile memory device including phase-change material