Inventor
YOSHIZUMI YUSUKE
JP82 patents
⚠️ This page may combine multiple inventors who share the name “YOSHIZUMI YUSUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO ELECTRIC INDUSTRIES
20 patentsUS7939354B2May 10, 2011
Method of fabricating nitride semiconductor laser
SUMITOMO ELECTRIC INDUSTRIES241 citations99
US7933303B2Apr 26, 2011
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
SUMITOMO ELECTRIC INDUSTRIES30 citations92
US8361885B2Jan 29, 2013
Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove
SUMITOMO ELECTRIC INDUSTRIES9 citations84
US7873088B2Jan 18, 2011
Group III nitride semiconductor element and epitaxial wafer
SUMITOMO ELECTRIC INDUSTRIES11 citations84
US7851821B2Dec 14, 2010
Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device
SUMITOMO ELECTRIC INDUSTRIES9 citations84
US9136337B2Sep 15, 2015
Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
SUMITOMO ELECTRIC INDUSTRIES7 citations83
US8053806B2Nov 8, 2011
Group III nitride semiconductor device and epitaxial substrate
SUMITOMO ELECTRIC INDUSTRIES4 citations74
US7858963B2Dec 28, 2010
Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device
SUMITOMO ELECTRIC INDUSTRIES6 citations74
US10600676B2Mar 24, 2020
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
SUMITOMO ELECTRIC INDUSTRIES2 citations72
US9917004B2Mar 13, 2018
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
SUMITOMO ELECTRIC INDUSTRIES2 citations72
US8357946B2Jan 22, 2013
Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device
SUMITOMO ELECTRIC INDUSTRIES2 citations63
US8048702B2Nov 1, 2011
Method of fabricating nitride-based semiconductor optical device
SUMITOMO ELECTRIC INDUSTRIES5 citations63
US7949026B2May 24, 2011
Group III nitride semiconductor laser
SUMITOMO ELECTRIC INDUSTRIES2 citations63
US7884351B2Feb 8, 2011
Nitride semiconductor light-emitting device
SUMITOMO ELECTRIC INDUSTRIES5 citations63
US7879636B2Feb 1, 2011
Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer
SUMITOMO ELECTRIC INDUSTRIES2 citations63
US7851243B1Dec 14, 2010
Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device
SUMITOMO ELECTRIC INDUSTRIES2 citations63
US7547910B2Jun 16, 2009
Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device
SUMITOMO ELECTRIC INDUSTRIES4 citations63
US11094537B2Aug 17, 2021
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
SUMITOMO ELECTRIC INDUSTRIES0 citations61
US9499925B2Nov 22, 2016
Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US8929416B2Jan 6, 2015
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
SUMITOMO ELECTRIC INDUSTRIES0 citations52
YOSHIZUMI YUSUKE
11 patentsUS8546163B2Oct 1, 2013
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE6 citations84
US8389312B2Mar 5, 2013
Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE13 citations84
US8306082B2Nov 6, 2012
Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE12 citations84
US8304793B2Nov 6, 2012
III-nitride semiconductor optical device and epitaxial substrate
YOSHIZUMI YUSUKE13 citations84
US8265113B2Sep 11, 2012
Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE14 citations84
US8227277B2Jul 24, 2012
Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE15 citations84
US8175129B2May 8, 2012
Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove
YOSHIZUMI YUSUKE14 citations84
US8741674B2Jun 3, 2014
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE6 citations73
US8488642B2Jul 16, 2013
Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diode
YOSHIZUMI YUSUKE3 citations63
US8507305B2Aug 13, 2013
Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate
YOSHIZUMI YUSUKE4 citations62
US8107507B2Jan 31, 2012
Group III nitride semiconductor element and epitaxial wafer
YOSHIZUMI YUSUKE2 citations62
TAKAGI SHIMPEI
7 patentsUS8105857B2Jan 31, 2012
Method of fabricating group-III nitride semiconductor laser device
TAKAGI SHIMPEI25 citations92
US8076167B2Dec 13, 2011
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
TAKAGI SHIMPEI22 citations92
US8071405B2Dec 6, 2011
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
TAKAGI SHIMPEI20 citations92
US8420419B2Apr 16, 2013
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
TAKAGI SHIMPEI5 citations84
US8401048B2Mar 19, 2013
Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
TAKAGI SHIMPEI12 citations84
US8213475B2Jul 3, 2012
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
TAKAGI SHIMPEI12 citations84
US8139619B2Mar 20, 2012
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
TAKAGI SHIMPEI13 citations84
KYONO TAKASHI
5 patentsUS8718110B2May 6, 2014
Nitride semiconductor laser and epitaxial substrate
KYONO TAKASHI6 citations72
US8803274B2Aug 12, 2014
Nitride-based semiconductor light-emitting element
KYONO TAKASHI3 citations62
US8513684B2Aug 20, 2013
Nitride semiconductor light emitting device
KYONO TAKASHI3 citations62
US8207556B2Jun 26, 2012
Group III nitride semiconductor device and epitaxial substrate
KYONO TAKASHI2 citations62
US8953656B2Feb 10, 2015
III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device
KYONO TAKASHI1 citations52
UENO MASAKI
3 patentsUS8927962B2Jan 6, 2015
Group III nitride semiconductor optical device
UENO MASAKI4 citations73
US8829545B2Sep 9, 2014
Group III nitride semiconductor light-emitting device
UENO MASAKI1 citations52
US8815621B2Aug 26, 2014
Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer
UENO MASAKI0 citations52
ISHIBASHI KEIJI
2 patentsUS8771552B2Jul 8, 2014
Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
ISHIBASHI KEIJI10 citations84
US9708735B2Jul 18, 2017
Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
ISHIBASHI KEIJI2 citations70
ENYA YOHEI
2 patentsUS8483251B2Jul 9, 2013
Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode
ENYA YOHEI2 citations62
US8207544B2Jun 26, 2012
Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device
ENYA YOHEI2 citations62
Showing the top 50 of 82 patents by PatentIndex Score.