Inventor
CHEN YEN-MING
TW306 patents
⚠️ This page may combine multiple inventors who share the name “CHEN YEN-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
27 patentsUS9564489B2Feb 7, 2017
Multiple gate field-effect transistors having oxygen-scavenged gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD297 citations99
US10522642B2Dec 31, 2019
Semiconductor device with air-spacer
TAIWAN SEMICONDUCTOR MFG CO LTD30 citations94
US10062784B1Aug 28, 2018
Self-aligned gate hard mask and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US9997631B2Jun 12, 2018
Methods for reducing contact resistance in semiconductors manufacturing process
TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US9570580B1Feb 14, 2017
Replacement gate process for FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD23 citations94
US9601497B1Mar 21, 2017
Static random access memory and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD28 citations93
US9275905B1Mar 1, 2016
Method of forming semiconductor structure with anti-punch through structure
TAIWAN SEMICONDUCTOR MFG CO LTD26 citations93
US11616142B2Mar 28, 2023
Semiconductor device with self-aligned wavy contact profile and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations86
US11145564B2Oct 12, 2021
Multi-layer passivation structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11437331B2Sep 6, 2022
Chip structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations85
US11195951B2Dec 7, 2021
Semiconductor device with self-aligned wavy contact profile and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11189705B2Nov 30, 2021
Methods of reducing parasitic capacitance in multi-gate field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10985167B2Apr 20, 2021
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10923565B2Feb 16, 2021
Self-aligned contact air gap formation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10867870B1Dec 15, 2020
Semiconductor device with funnel shape spacer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10658184B2May 19, 2020
Pattern fidelity enhancement with directional patterning technology
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10529803B2Jan 7, 2020
Semiconductor device with epitaxial source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10529725B2Jan 7, 2020
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10522409B2Dec 31, 2019
Fin field effect transistor (FinFET) device structure with dummy fin structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10510762B2Dec 17, 2019
Source and drain formation technique for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10497628B2Dec 3, 2019
Methods of forming epitaxial structures in fin-like field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10483266B2Nov 19, 2019
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10418363B2Sep 17, 2019
Replacement gate process for FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10283624B1May 7, 2019
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10276691B2Apr 30, 2019
Conformal transfer doping method for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10217815B1Feb 26, 2019
Integrated circuit device with source/drain barrier
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10153280B2Dec 11, 2018
Replacement gate process for FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
TAIWAN SEMICONDUCTOR MFG
19 patentsUS6605524B1Aug 12, 2003
Bumping process to increase bump height and to create a more robust bump structure
TAIWAN SEMICONDUCTOR MFG78 citations98
US6482669B1Nov 19, 2002
Colors only process to reduce package yield loss
TAIWAN SEMICONDUCTOR MFG81 citations98
US6426281B1Jul 30, 2002
Method to form bump in bumping technology
TAIWAN SEMICONDUCTOR MFG147 citations98
US6743660B2Jun 1, 2004
Method of making a wafer level chip scale package
TAIWAN SEMICONDUCTOR MFG110 citations97
US6756294B1Jun 29, 2004
Method for improving bump reliability for flip chip devices
TAIWAN SEMICONDUCTOR MFG53 citations96
US6632700B1Oct 14, 2003
Method to form a color image sensor cell while protecting the bonding pad structure from damage
TAIWAN SEMICONDUCTOR MFG58 citations96
US6211057B1Apr 3, 2001
Method for manufacturing arch air gap in multilevel interconnection
TAIWAN SEMICONDUCTOR MFG67 citations96
US6130151AOct 10, 2000
Method of manufacturing air gap in multilevel interconnection
TAIWAN SEMICONDUCTOR MFG83 citations95
US6077733AJun 20, 2000
Method of manufacturing self-aligned T-shaped gate through dual damascene
TAIWAN SEMICONDUCTOR MFG115 citations95
US5950094ASep 7, 1999
Method for fabricating fully dielectric isolated silicon (FDIS)
TAIWAN SEMICONDUCTOR MFG94 citations94
US6956292B2Oct 18, 2005
Bumping process to increase bump height and to create a more robust bump structure
TAIWAN SEMICONDUCTOR MFG37 citations92
US6936923B2Aug 30, 2005
Method to form very a fine pitch solder bump using methods of electroplating
TAIWAN SEMICONDUCTOR MFG23 citations92
US6876049B2Apr 5, 2005
Colors only process to reduce package yield loss
TAIWAN SEMICONDUCTOR MFG12 citations92
US6649507B1Nov 18, 2003
Dual layer photoresist method for fabricating a mushroom bumping plating structure
TAIWAN SEMICONDUCTOR MFG33 citations92
US6636313B2Oct 21, 2003
Method of measuring photoresist and bump misalignment
TAIWAN SEMICONDUCTOR MFG37 citations92
US6602775B1Aug 5, 2003
Method to improve reliability for flip-chip device for limiting pad design
TAIWAN SEMICONDUCTOR MFG29 citations92
US6583039B2Jun 24, 2003
Method of forming a bump on a copper pad
TAIWAN SEMICONDUCTOR MFG37 citations92
US6372545B1Apr 16, 2002
Method for under bump metal patterning of bumping process
TAIWAN SEMICONDUCTOR MFG22 citations92
US6069063AMay 30, 2000
Method to form polysilicon resistors shielded from hydrogen intrusion
TAIWAN SEMICONDUCTOR MFG25 citations92
TSAI MING-HUAN
1 patentCHEN YEN MING
1 patentHSU CHUN-WEI
1 patentYIN JIN-MU
1 patentShowing the top 50 of 306 patents by PatentIndex Score.