Inventor
YANG FENG-CHENG
TW222 patents
⚠️ This page may combine multiple inventors who share the name “YANG FENG-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
49 patentsUS11423966B2Aug 23, 2022
Memory array staircase structure
TAIWAN SEMICONDUCTOR MFG CO LTD23 citations95
US10522642B2Dec 31, 2019
Semiconductor device with air-spacer
TAIWAN SEMICONDUCTOR MFG CO LTD30 citations94
US9570556B1Feb 14, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD27 citations94
US9748389B1Aug 29, 2017
Method for semiconductor device fabrication with improved source drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations92
US11791335B2Oct 17, 2023
Method for forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations86
US11776602B2Oct 3, 2023
Memory array staircase structure
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11616142B2Mar 28, 2023
Semiconductor device with self-aligned wavy contact profile and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations86
US11587823B2Feb 21, 2023
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11355516B2Jun 7, 2022
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US11527553B2Dec 13, 2022
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11495618B2Nov 8, 2022
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11195951B2Dec 7, 2021
Semiconductor device with self-aligned wavy contact profile and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11189705B2Nov 30, 2021
Methods of reducing parasitic capacitance in multi-gate field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11018134B2May 25, 2021
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10985167B2Apr 20, 2021
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10923565B2Feb 16, 2021
Self-aligned contact air gap formation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10529803B2Jan 7, 2020
Semiconductor device with epitaxial source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10529725B2Jan 7, 2020
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10497628B2Dec 3, 2019
Methods of forming epitaxial structures in fin-like field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10483266B2Nov 19, 2019
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10283624B1May 7, 2019
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10276691B2Apr 30, 2019
Conformal transfer doping method for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10217815B1Feb 26, 2019
Integrated circuit device with source/drain barrier
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10141231B1Nov 27, 2018
FinFET device with wrapped-around epitaxial structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US10037923B1Jul 31, 2018
Forming transistor by selectively growing gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9812576B2Nov 7, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9780214B2Oct 3, 2017
Semiconductor device including Fin- FET and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11728223B2Aug 15, 2023
Semiconductor device and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11647634B2May 9, 2023
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11984489B2May 14, 2024
Air spacer for a gate structure of a transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11910616B2Feb 20, 2024
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11903216B2Feb 13, 2024
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11901408B2Feb 13, 2024
Self-aligned contact air gap formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11862713B2Jan 2, 2024
Conformal transfer doping method for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855097B2Dec 26, 2023
Air gap formation between gate spacer and epitaxy structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11856743B2Dec 26, 2023
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11805652B2Oct 31, 2023
3D RAM SL/BL contact modulation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11744080B2Aug 29, 2023
Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11694933B2Jul 4, 2023
Methods of forming metal gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11631746B2Apr 18, 2023
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11574929B2Feb 7, 2023
3D ferroelectric memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11569264B2Jan 31, 2023
3D RAM SL/BL contact modulation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11552103B2Jan 10, 2023
Three-dimensional stackable ferroelectric random access memory devices and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11532640B2Dec 20, 2022
Method for manufacturing a three-dimensional memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11508736B2Nov 22, 2022
Method for forming different types of devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11456295B2Sep 27, 2022
Air gap formation between gate spacer and epitaxy structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11362199B2Jun 14, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11355641B2Jun 7, 2022
Merged source/drain features
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11257928B2Feb 22, 2022
Method for epitaxial growth and device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
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