P

Inventor

YANG FENG-CHENG

TW222 patents
⚠️ This page may combine multiple inventors who share the name “YANG FENG-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

49 patents
US11423966B2Aug 23, 2022

Memory array staircase structure

TAIWAN SEMICONDUCTOR MFG CO LTD23 citations95
US10522642B2Dec 31, 2019

Semiconductor device with air-spacer

TAIWAN SEMICONDUCTOR MFG CO LTD30 citations94
US9570556B1Feb 14, 2017

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD27 citations94
US9748389B1Aug 29, 2017

Method for semiconductor device fabrication with improved source drain epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD12 citations92
US11791335B2Oct 17, 2023

Method for forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations86
US11776602B2Oct 3, 2023

Memory array staircase structure

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11616142B2Mar 28, 2023

Semiconductor device with self-aligned wavy contact profile and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations86
US11587823B2Feb 21, 2023

Three-dimensional memory device and method

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11355516B2Jun 7, 2022

Three-dimensional memory device and method

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US11527553B2Dec 13, 2022

Three-dimensional memory device and method

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11495618B2Nov 8, 2022

Three-dimensional memory device and method

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11195951B2Dec 7, 2021

Semiconductor device with self-aligned wavy contact profile and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11189705B2Nov 30, 2021

Methods of reducing parasitic capacitance in multi-gate field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11018134B2May 25, 2021

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10985167B2Apr 20, 2021

Flexible merge scheme for source/drain epitaxy regions

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10923565B2Feb 16, 2021

Self-aligned contact air gap formation

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10529803B2Jan 7, 2020

Semiconductor device with epitaxial source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10529725B2Jan 7, 2020

Flexible merge scheme for source/drain epitaxy regions

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10497628B2Dec 3, 2019

Methods of forming epitaxial structures in fin-like field effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10483266B2Nov 19, 2019

Flexible merge scheme for source/drain epitaxy regions

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10283624B1May 7, 2019

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10276691B2Apr 30, 2019

Conformal transfer doping method for fin-like field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10217815B1Feb 26, 2019

Integrated circuit device with source/drain barrier

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10141231B1Nov 27, 2018

FinFET device with wrapped-around epitaxial structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US10037923B1Jul 31, 2018

Forming transistor by selectively growing gate spacer

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9812576B2Nov 7, 2017

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9780214B2Oct 3, 2017

Semiconductor device including Fin- FET and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11728223B2Aug 15, 2023

Semiconductor device and methods of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11647634B2May 9, 2023

Three-dimensional memory device and method

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11984489B2May 14, 2024

Air spacer for a gate structure of a transistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11910616B2Feb 20, 2024

Three-dimensional memory device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11903216B2Feb 13, 2024

Three-dimensional memory device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11901408B2Feb 13, 2024

Self-aligned contact air gap formation

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11862713B2Jan 2, 2024

Conformal transfer doping method for fin-like field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855097B2Dec 26, 2023

Air gap formation between gate spacer and epitaxy structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11856743B2Dec 26, 2023

Flexible merge scheme for source/drain epitaxy regions

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11805652B2Oct 31, 2023

3D RAM SL/BL contact modulation

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11744080B2Aug 29, 2023

Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11694933B2Jul 4, 2023

Methods of forming metal gate spacer

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11631746B2Apr 18, 2023

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11574929B2Feb 7, 2023

3D ferroelectric memory

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11569264B2Jan 31, 2023

3D RAM SL/BL contact modulation

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11552103B2Jan 10, 2023

Three-dimensional stackable ferroelectric random access memory devices and methods of forming

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11532640B2Dec 20, 2022

Method for manufacturing a three-dimensional memory

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11508736B2Nov 22, 2022

Method for forming different types of devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11456295B2Sep 27, 2022

Air gap formation between gate spacer and epitaxy structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11362199B2Jun 14, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11355641B2Jun 7, 2022

Merged source/drain features

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11257928B2Feb 22, 2022

Method for epitaxial growth and device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

PIXART IMAGING INC

1 patent

Showing the top 50 of 222 patents by PatentIndex Score.