Inventor
YATER JANE A
US36 patents
⚠️ This page may combine multiple inventors who share the name “YATER JANE A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
20 patentsUS6791883B2Sep 14, 2004
Program and erase in a thin film storage non-volatile memory
FREESCALE SEMICONDUCTOR INC66 citations96
US8901632B1Dec 2, 2014
Non-volatile memory (NVM) and high-K and metal gate integration using gate-last methodology
FREESCALE SEMICONDUCTOR INC40 citations94
US8372699B2Feb 12, 2013
Method for forming a split-gate memory cell
FREESCALE SEMICONDUCTOR INC44 citations94
US8969940B1Mar 3, 2015
Method of gate strapping in split-gate memory cell with inlaid gate
FREESCALE SEMICONDUCTOR INC21 citations92
US6964902B2Nov 15, 2005
Method for removing nanoclusters from selected regions
FREESCALE SEMICONDUCTOR INC20 citations92
US6839280B1Jan 4, 2005
Variable gate bias for a reference transistor in a non-volatile memory
FREESCALE SEMICONDUCTOR INC43 citations92
US6751125B2Jun 15, 2004
Gate voltage reduction in a memory read
FREESCALE SEMICONDUCTOR INC37 citations92
US9275864B2Mar 1, 2016
Method to form a polysilicon nanocrystal thin film storage bitcell within a high k metal gate platform technology using a gate last process to form transistor gates
FREESCALE SEMICONDUCTOR INC19 citations84
US9129855B2Sep 8, 2015
Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology
FREESCALE SEMICONDUCTOR INC7 citations84
US6969883B2Nov 29, 2005
Non-volatile memory having a reference transistor
FREESCALE SEMICONDUCTOR INC15 citations84
US7262997B2Aug 28, 2007
Process for operating an electronic device including a memory array and conductive lines
FREESCALE SEMICONDUCTOR INC6 citations74
US7064030B2Jun 20, 2006
Method for forming a multi-bit non-volatile memory device
FREESCALE SEMICONDUCTOR INC9 citations74
US6955967B2Oct 18, 2005
Non-volatile memory having a reference transistor and method for forming
FREESCALE SEMICONDUCTOR INC6 citations74
US7902022B2Mar 8, 2011
Self-aligned in-laid split gate memory and method of making
FREESCALE SEMICONDUCTOR INC5 citations63
US7471560B2Dec 30, 2008
Electronic device including a memory array and conductive lines
FREESCALE SEMICONDUCTOR INC5 citations63
US7256454B2Aug 14, 2007
Electronic device including discontinuous storage elements and a process for forming the same
FREESCALE SEMICONDUCTOR INC6 citations63
US9847397B2Dec 19, 2017
Method of forming split gate memory with improved reliability
FREESCALE SEMICONDUCTOR INC0 citations52
US9331092B2May 3, 2016
Methods for forming contact landing regions in split-gate non-volatile memory (NVM) cell arrays
FREESCALE SEMICONDUCTOR INC0 citations52
US9397201B2Jul 19, 2016
Non-volatile memory (NVM) cell and a method of making
FREESCALE SEMICONDUCTOR INC0 citations51
US10026820B2Jul 17, 2018
Split gate device with doped region and method therefor
FREESCALE SEMICONDUCTOR INC0 citations42
YATER JOSEPH C
3 patentsKANG SUNG-TAEG
3 patentsUS8329544B2Dec 11, 2012
Method for forming a semiconductor device having nanocrystals
KANG SUNG-TAEG3 citations62
US8679912B2Mar 25, 2014
Semiconductor device having different non-volatile memories having nanocrystals of differing densities and method therefor
KANG SUNG-TAEG1 citations52
US8329543B2Dec 11, 2012
Method for forming a semiconductor device having nanocrystals
KANG SUNG-TAEG1 citations52
YATER JANE A
3 patentsUS9054208B2Jun 9, 2015
Methods for forming contact landing regions in split-gate non-volatile memory (NVM) cell arrays
YATER JANE A0 citations48
US9685339B2Jun 20, 2017
Scalable split gate memory cell array
YATER JANE A0 citations38
US8431471B2Apr 30, 2013
Method for integrating a non-volatile memory (NVM)
YATER JANE A0 citations38