P

Inventor

ONO YOSHINOBU

JP57 patents
⚠️ This page may combine multiple inventors who share the name “ONO YOSHINOBU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO CHEMICAL CO

19 patents
US8053811B2Nov 8, 2011

Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor element

SUMITOMO CHEMICAL CO19 citations92
US7645625B2Jan 12, 2010

Method for fine processing of substrate, method for fabrication of substrate, and light emitting device

SUMITOMO CHEMICAL CO27 citations92
US6346720B1Feb 12, 2002

Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element

SUMITOMO CHEMICAL CO29 citations92
US6225195B1May 1, 2001

Method for manufacturing group III-V compound semiconductor

SUMITOMO CHEMICAL CO22 citations92
US6023077AFeb 8, 2000

Group III-V compound semiconductor and light-emitting device

SUMITOMO CHEMICAL CO27 citations92
US5708301AJan 13, 1998

Electrode material and electrode for III-V group compound semiconductor

SUMITOMO CHEMICAL CO17 citations92
US7098484B2Aug 29, 2006

Epitaxial substrate for compound semiconductor light-emitting device, method for producing the same and light-emitting device

SUMITOMO CHEMICAL CO13 citations83
US7399687B2Jul 15, 2008

Substrate of gallium nitride single crystal and process for producing the same

SUMITOMO CHEMICAL CO11 citations82
US6617235B2Sep 9, 2003

Method of manufacturing Group III-V compound semiconductor

SUMITOMO CHEMICAL CO11 citations74
US6472298B2Oct 29, 2002

Layered group III-V compound semiconductor, method of manufacturing the same and light emitting element

SUMITOMO CHEMICAL CO11 citations74
US7459326B2Dec 2, 2008

Method for producing and epitaxial substrate for compound semiconductor light-emitting device

SUMITOMO CHEMICAL CO8 citations73
US6716724B1Apr 6, 2004

Method of producing 3-5 group compound semiconductor and semiconductor element

SUMITOMO CHEMICAL CO10 citations73
US5980632ANov 9, 1999

Member for use in production device for semiconductors

SUMITOMO CHEMICAL CO12 citations71
US6864159B2Mar 8, 2005

Method for fabricating III-V compound semiconductor

SUMITOMO CHEMICAL CO2 citations63
US6388323B1May 14, 2002

Electrode material and electrode for III-V group compound semiconductor

SUMITOMO CHEMICAL CO3 citations63
US7897993B2Mar 1, 2011

GaN based luminescent device on a metal substrate

SUMITOMO CHEMICAL CO4 citations62
US7229493B2Jun 12, 2007

3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same

SUMITOMO CHEMICAL CO5 citations62
US6104044AAug 15, 2000

Semiconductor compound electrode material containing calcium and a noble metal

SUMITOMO CHEMICAL CO6 citations62
US6100105AAug 8, 2000

Fabrication of InGaAlN based compound semiconductor device

SUMITOMO CHEMICAL CO3 citations60

NIHON KOHDEN CORP

7 patents

FUJITSU LTD

5 patents

HITACHI LTD

4 patents

HONDA MOTOR CO LTD

3 patents

ONO YOSHINOBU

3 patents

INUI KOJI

2 patents

AMAMIYA SATOSHI

1 patent

YAMAMORI SHINJI

1 patent

KASAHARA KENJI

1 patent

MATSUSHITA ELECTRIC INDUSTIAL

1 patent

YAMANAKA SADANORI

1 patent

FURUKAWA YUKIO

1 patent

SUMITOMO CHEMICAL COMPANY LIMT

1 patent

Showing the top 50 of 57 patents by PatentIndex Score.