Inventor
FLYNN JEFFREY S
US16 patents
⚠️ This page may combine multiple inventors who share the name “FLYNN JEFFREY S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CREE INC
10 patentsUS7919791B2Apr 5, 2011
Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
CREE INC199 citations99
US7118813B2Oct 10, 2006
Vicinal gallium nitride substrate for high quality homoepitaxy
CREE INC42 citations96
US7915152B2Mar 29, 2011
III-V nitride substrate boule and method of making and using the same
CREE INC12 citations92
US7655197B2Feb 2, 2010
III-V nitride substrate boule and method of making and using the same
CREE INC19 citations92
US7390581B2Jun 24, 2008
Vicinal gallium nitride substrate for high quality homoepitaxy
CREE INC9 citations84
US7282744B2Oct 16, 2007
III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier
CREE INC15 citations79
US7795707B2Sep 14, 2010
High voltage switching devices and process for forming same
CREE INC5 citations74
US8043731B2Oct 25, 2011
Vicinal gallium nitride substrate for high quality homoepitaxy
CREE INC1 citations63
US7700203B2Apr 20, 2010
Vicinal gallium nitride substrate for high quality homoepitaxy
CREE INC1 citations63
US8698286B2Apr 15, 2014
High voltage switching devices and process for forming same
CREE INC0 citations52
ADVANCED TECH MATERIALS
3 patentsUS6596079B1Jul 22, 2003
III-V nitride substrate boule and method of making and using the same
ADVANCED TECH MATERIALS427 citations99
US6533874B1Mar 18, 2003
GaN-based devices using thick (Ga, Al, In)N base layers
ADVANCED TECH MATERIALS232 citations99
US6447604B1Sep 10, 2002
Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
ADVANCED TECH MATERIALS306 citations98
FLYNN JEFFREY S
3 patentsUS8212259B2Jul 3, 2012
III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates
FLYNN JEFFREY S22 citations90
US8174089B2May 8, 2012
High voltage switching devices and process for forming same
FLYNN JEFFREY S6 citations83
US8390101B2Mar 5, 2013
High voltage switching devices and process for forming same
FLYNN JEFFREY S4 citations73