Inventor

VAUDO ROBERT P

US33 patents

⚠️ This page may combine multiple inventors who share the name “VAUDO ROBERT P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VAUDO ROBERT P

CREE INC

Bulk single crystal gallium nitride and method of making same

Semi-insulating GaN and method of making the same

High surface quality GaN wafer and method of fabricating same

Vicinal gallium nitride substrate for high quality homoepitaxy

Free-standing (Al, Ga, In)N and parting method for forming same

Large area, uniformly low dislocation density GaN substrate and process for making the same

Large area, uniformly low dislocation density GaN substrate and process for making the same

III-V nitride substrate boule and method of making and using the same

III-V nitride substrate boule and method of making and using the same

Bulk single crystal gallium nitride and method of making same

Bulk single crystal gallium nitride and method of making same

Low defect density (Ga, A1, In) N and HVPE process for making same

Vicinal gallium nitride substrate for high quality homoepitaxy

High voltage switching devices and process for forming same

Bulk single crystal gallium nitride and method of making same

Orientation of electronic devices on mis-cut substrates

Vicinal gallium nitride substrate for high quality homoepitaxy

Large area, uniformly low dislocation density GaN substrate and process for making the same

Laser diode orientation on mis-cut substrates

Vicinal gallium nitride substrate for high quality homoepitaxy

High voltage switching devices and process for forming same

ADVANCED TECH MATERIALS

III-V nitride substrate boule and method of making and using the same

GaN-based devices using thick (Ga, Al, In)N base layers

High surface quality GaN wafer and method of fabricating same

GaN-based devices using (Ga, AL, In)N base layers

Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices

Low defect density (Ga, Al, In)N and HVPE process for making same

FLYNN JEFFREY S

III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates

High voltage switching devices and process for forming same

High voltage switching devices and process for forming same

NEXTREME THERMAL SOLUTIONS INC

Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices

Thin film thermoelectric devices having favorable crystal tilt

XU XUEPING

Low dislocation density III-V nitride substrate including filled pits and process for making the same