Inventor

SCHWAN CHRISTOPH

DE23 patents

⚠️ This page may combine multiple inventors who share the name “SCHWAN CHRISTOPH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SCHWAN CHRISTOPH

ADVANCED MICRO DEVICES INC

Method for formation of a differential offset spacer

Method of forming a conformal spacer adjacent to a gate electrode structure

Technique for forming contact insulation layers and silicide regions with different characteristics

Method of forming sidewall spacer elements for a circuit element by increasing an etch selectivity

Method of making a semiconductor device comprising isolation trenches inducing different types of strain

Method for enhancing shallow trench top corner rounding using endpoint control of nitride layer etch process with appropriate etch front

Field effect transistor comprising a stressed channel region and method of forming the same

Method of compensating for etch rate non-uniformities by ion implantation

Signal layer for generating characteristic optical plasma emissions

Technique for forming recessed sidewall spacers for a polysilicon line

Method of adjusting etch selectivity by adapting aspect ratios in a multi-level etch process

Method for patterning contact etch stop layers by using a planarization process

Method of depositing a layer of a material on a substrate

Field effect transistor having a stressed dielectric layer based on an enhanced device topography

KURZ ANDREAS

Electronic fuse structure formed using a metal gate electrode material stack configuration

SOI device with a buried insulating material having increased etch resistivity

Methods of forming efuse devices

Semiconductor device comprising a silicon/germanium resistor

SCHWAN CHRISTOPH

Wall construction and component for the same

Semiconductor device comprising isolation trenches inducing different types of strain

GLOBALFOUNDRIES INC

Semiconductor device including a vertical decoupling capacitor

Method of increasing transistor drive current by recessing an isolation trench

GRIEBENOW UWE

Method of creating a strained channel region in a transistor by deep implantation of strain-inducing species below the channel region