Inventor

HARADA SHIN

JP58 patents

⚠️ This page may combine multiple inventors who share the name “HARADA SHIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HARADA SHIN

SUMITOMO ELECTRIC INDUSTRIES

Pinch-off type vertical junction field effect transistor and method of manufacturing the same

Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors

Method of manufacturing silicon carbide single crystal

Method of manufacturing silicon carbide single crystal

Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors

Lateral junction field-effect transistor

Transverse junction field effect transistor

Silicon carbide substrate and method of manufacturing the same

Lateral junction field effect transistor and method of manufacturing the same

Lateral junction field effect transistor and method of manufacturing the same

Lateral junction field-effect transistor

Method of fabricating semiconductor device

Field effect transistor

Lateral junction field effect transistor and method of manufacturing the same

Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate

Semiconductor device and method for manufacturing same

Dislocation in SiC semiconductor substrate

Dislocation in SiC semiconductor substrate

Dislocations in SiC semiconductor substrate

Method of fabricating semiconductor device

Method for manufacturing silicon carbide single crystal

Silicon carbide substrate

Method for manufacturing silicon carbide single crystal

HARADA SHIN

Substrate composed of silicon carbide with thin film, semiconductor device, and method of manufacturing a semiconductor device

Silicon carbide substrate and method of manufacturing the same

Insulated gate bipolar transistor

Insulated gate field effect transistor

Silicon carbide semiconductor device and method of manufacturing the same

Silicon carbide semiconductor device and method for manufacturing the same

Silicon carbide semiconductor device and method of manufacturing the same

Semiconductor device and method for manufacturing same

Silicon carbide semiconductor device and method of manufacturing the same

Silicon carbide substrate, semiconductor device, method of manufacturing silicon carbide substrate and method of manufacturing semiconductor device

Semiconductor device and method for manufacturing same

NISHIGUCHI TARO

Semiconductor substrate

Semiconductor substrate

Semiconductor substrate

Method for manufacturing silicon carbide substrate

Method of manufacturing single crystal

SASAKI MAKOTO

Method for manufacturing semiconductor substrate

Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate

Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate

Method for manufacturing silicon carbide substrate and method for manufacturing semiconductor device

WADA KEIJI

MOSFET and method for manufacturing MOSFET

MOSFET and method for manufacturing MOSFET

HONAGA MISAKO

Silicon carbide semiconductor device and method of manufacturing thereof

Silicon carbide semiconductor device and method of manufacturing thereof

FUJIKAWA KAZUHIRO

Method of producing semiconductor device and semiconductor device

MASUDA TAKEYOSHI

Semiconductor device and method for manufacturing same

NEC CORP

Method for inserting advertisement into PoC and extended-PoC communication system