P

Inventor

HOFFMAN DANIEL J

US115 patents
⚠️ This page may combine multiple inventors who share the name “HOFFMAN DANIEL J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

21 patents
US6894245B2May 17, 2005

Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression

APPLIED MATERIALS INC108 citations99
US6528751B1Mar 4, 2003

Plasma reactor with overhead RF electrode tuned to the plasma

APPLIED MATERIALS INC266 citations99
US7967944B2Jun 28, 2011

Method of plasma load impedance tuning by modulation of an unmatched low power RF generator

APPLIED MATERIALS INC57 citations98
US7955986B2Jun 7, 2011

Capacitively coupled plasma reactor with magnetic plasma control

APPLIED MATERIALS INC70 citations98
US7220937B2May 22, 2007

Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination

APPLIED MATERIALS INC94 citations98
US7030335B2Apr 18, 2006

Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression

APPLIED MATERIALS INC72 citations98
US6900596B2May 31, 2005

Capacitively coupled plasma reactor with uniform radial distribution of plasma

APPLIED MATERIALS INC224 citations98
US7196283B2Mar 27, 2007

Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface

APPLIED MATERIALS INC118 citations97
US8012304B2Sep 6, 2011

Plasma reactor with a multiple zone thermal control feed forward control apparatus

APPLIED MATERIALS INC27 citations96
US7521370B2Apr 21, 2009

Method of operating a plasma reactor chamber with respect to two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power

APPLIED MATERIALS INC36 citations96
US7132618B2Nov 7, 2006

MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression

APPLIED MATERIALS INC43 citations96
US6326597B1Dec 4, 2001

Temperature control system for process chamber

APPLIED MATERIALS INC659 citations96
US7221553B2May 22, 2007

Substrate support having heat transfer system

APPLIED MATERIALS INC49 citations95
US8018164B2Sep 13, 2011

Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources

APPLIED MATERIALS INC47 citations94
US8357264B2Jan 22, 2013

Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator

APPLIED MATERIALS INC33 citations93
US7553679B2Jun 30, 2009

Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current

APPLIED MATERIALS INC22 citations93
US7247218B2Jul 24, 2007

Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power

APPLIED MATERIALS INC32 citations93
US8021521B2Sep 20, 2011

Method for agile workpiece temperature control in a plasma reactor using a thermal model

APPLIED MATERIALS INC13 citations92
US7780866B2Aug 24, 2010

Method of plasma confinement for enhancing magnetic control of plasma radial distribution

APPLIED MATERIALS INC40 citations92
US7359177B2Apr 15, 2008

Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output

APPLIED MATERIALS INC42 citations92
US7620511B2Nov 17, 2009

Method for determining plasma characteristics

APPLIED MATERIALS INC14 citations91

ADVANCED ENERGY IND INC

7 patents

HOFFMAN DANIEL J

6 patents

BUCHBERGER JR DOUGLAS A

5 patents

BROUK VICTOR

4 patents

BOEING CO

2 patents

CARTER DANIEL

1 patent

BERA KALLOL

1 patent

(unassigned)

1 patent

BRILLHART PAUL LUKAS

1 patent

MARTIN MARIETTA ENERGY SYSTEMS

1 patent

Showing the top 50 of 115 patents by PatentIndex Score.