P

Inventor

LIANG YAO-HSIANG

TW41 patents
⚠️ This page may combine multiple inventors who share the name “LIANG YAO-HSIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

28 patents
US10134801B2Nov 20, 2018

Method of forming deep trench isolation in radiation sensing substrate and image sensor device

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US10475847B2Nov 12, 2019

Semiconductor device having stress-neutralized film stack and method of fabricating same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11417700B2Aug 16, 2022

Image sensing device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10741601B2Aug 11, 2020

Image sensing device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10074594B2Sep 11, 2018

Semiconductor structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US9691804B2Jun 27, 2017

Image sensing device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9966304B2May 8, 2018

Method for forming interconnect structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US12557401B2Feb 17, 2026

Method of forming deep trench isolation in radiation sensing substrate and image sensor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12142628B2Nov 12, 2024

Method of forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11603602B2Mar 14, 2023

Method for controlling electrochemical deposition to avoid defects in interconnect structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11404470B2Aug 2, 2022

Method of forming deep trench isolation in radiation sensing substrate and image sensor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11387274B2Jul 12, 2022

Method of forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11015260B2May 25, 2021

Method for controlling electrochemical deposition to avoid defects in interconnect structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9006900B2Apr 14, 2015

Semiconductor device with advanced pad structure resistant to plasma damage and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations62
US12341055B2Jun 24, 2025

Method of manufacturing semiconductor devices and semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11854980B2Dec 26, 2023

Method for forming titanium nitride barrier with small surface grains in interconnects

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11158659B2Oct 26, 2021

Semiconductor device structure with anti-acid layer and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations53
US9666545B2May 30, 2017

Semiconductor device with advanced pad structure resistant to plasma damage and metnod for forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9385081B2Jul 5, 2016

Semiconductor device with advanced pad structure resistant to plasma damage and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10867889B2Dec 15, 2020

Method of manufacturing semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10510798B2Dec 17, 2019

Method of forming deep trench isolation in radiation sensing substrate and image sensor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10157953B2Dec 18, 2018

Image sensing device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9991204B2Jun 5, 2018

Through via structure for step coverage improvement

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9859124B2Jan 2, 2018

Method of manufacturing semiconductor device with recess

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9711454B2Jul 18, 2017

Through via structure for step coverage improvement

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10796996B2Oct 6, 2020

Semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US12362273B2Jul 15, 2025

Conductive structures and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47
US12557619B2Feb 17, 2026

Semiconductor structure including multiple barrier layers and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations43

TAIWAN SEMICONDUCTOR MFG

11 patents

WANG HUNG-CHIH

1 patent

LIANG YAO HSIANG

1 patent