Inventor
HO HERBERT LEI
US16 patents
⚠️ This page may combine multiple inventors who share the name “HO HERBERT LEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
14 patentsUS5876788AMar 2, 1999
High dielectric TiO2 -SiN composite films for memory applications
IBM97 citations96
US6153474ANov 28, 2000
Method of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrate
IBM28 citations92
US6015985AJan 18, 2000
Deep trench with enhanced sidewall surface area
IBM19 citations92
US5849638ADec 15, 1998
Deep trench with enhanced sidewall surface area
IBM24 citations92
US7682896B2Mar 23, 2010
Trench metal-insulator-metal (MIM) capacitors integrated with middle-of-line metal contacts, and method of fabricating same
IBM20 citations91
US5899724AMay 4, 1999
Method for fabricating a titanium resistor
IBM26 citations89
US7153737B2Dec 26, 2006
Self-aligned, silicided, trench-based, DRAM/EDRAM processes with improved retention
IBM11 citations82
US6014310AJan 11, 2000
High dielectric TiO2 -SiN composite films for memory applications
IBM14 citations81
US6553561B2Apr 22, 2003
Method for patterning a silicon-on-insulator photomask
IBM10 citations66
US7564086B2Jul 21, 2009
Self-aligned, silicided, trench-based DRAM/eDRAM processes with improved retention
IBM5 citations57
US7491994B2Feb 17, 2009
Ferromagnetic memory cell and methods of making and using the same
IBM0 citations52
US9171848B2Oct 27, 2015
Deep trench MIM capacitor and moat isolation with epitaxial semiconductor wafer scheme
IBM1 citations51
US8343864B2Jan 1, 2013
DRAM with schottky barrier FET and MIM trench capacitor
IBM1 citations46
US9059194B2Jun 16, 2015
High-K and metal filled trench-type EDRAM capacitor with electrode depth and dimension control
IBM0 citations35