Inventor

VAN MEER JOHANNES M

US19 patents

⚠️ This page may combine multiple inventors who share the name “VAN MEER JOHANNES M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VAN MEER JOHANNES M

APPLIED MATERIALS INC

Asymmetric fin trimming for fins of FinFET device

Semiconductor device cavity formation using directional deposition

Devices and methods for DRAM leakage reduction

Ion implantation process to form punch through stopper

Bottom implant and airgap isolation for nanosheet semiconductor devices

Directional etch for improved dual deck three-dimensional NAND architecture margin

Enhanced etch resistance for insulator layers implanted with low energy ions

Three dimensional device formation using early removal of sacrificial heterostructure layer

Method of forming a 2-dimensional channel material, using ion implantation

Carbon and boron implantation for backside chemical mechanical planarization control

Wordline contact formation in NAND devices

GLOBALFOUNDRIES INC

Transistor device with improved source/drain junction architecture and methods of making such a device

Epitaxially forming a set of fins in a semiconductor device

Transistor device with improved source/drain junction architecture and methods of making such a device

Epitaxially forming a set of fins in a semiconductor device

Shallow trench isolation

Stress memorization techniques for transistor devices

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC

Techniques for forming isolation structures in a substrate

Critical dimensions variance compensation