Inventor
VARIAM NAUSHAD K
US16 patents
⚠️ This page may combine multiple inventors who share the name “VARIAM NAUSHAD K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
8 patentsUS11942361B2Mar 26, 2024
Semiconductor device cavity formation using directional deposition
APPLIED MATERIALS INC2 citations71
US12300494B2May 13, 2025
Ion implantation process to form punch through stopper
APPLIED MATERIALS INC0 citations62
US11948832B2Apr 2, 2024
Bottom implant and airgap isolation for nanosheet semiconductor devices
APPLIED MATERIALS INC0 citations62
US10903211B1Jan 26, 2021
Gate devices and methods of formation using angled ions
APPLIED MATERIALS INC0 citations61
US12230691B2Feb 18, 2025
Three dimensional device formation using early removal of sacrificial heterostructure layer
APPLIED MATERIALS INC0 citations60
US10692775B2Jun 23, 2020
Fin damage reduction during punch through implantation of FinFET device
APPLIED MATERIALS INC0 citations51
US10686033B2Jun 16, 2020
Fin damage reduction during punch through implantation of FinFET device
APPLIED MATERIALS INC0 citations51
US11778832B2Oct 3, 2023
Wordline contact formation in NAND devices
APPLIED MATERIALS INC0 citations50
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC
5 patentsUS10403552B1Sep 3, 2019
Replacement gate formation with angled etch and deposition
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC7 citations83
US11217491B2Jan 4, 2022
Replacement gate formation with angled etch and deposition
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations62
US10971403B2Apr 6, 2021
Structure and method of forming fin device having improved fin liner
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations62
US10510610B2Dec 17, 2019
Structure and method of forming fin device having improved fin liner
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC1 citations62
US10720357B2Jul 21, 2020
Method of forming transistor device having fin cut regions
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations41