Inventor
LIU JIN PING
US43 patents
⚠️ This page may combine multiple inventors who share the name “LIU JIN PING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
29 patentsUS9362180B2Jun 7, 2016
Integrated circuit having multiple threshold voltages
GLOBALFOUNDRIES INC425 citations98
US9466723B1Oct 11, 2016
Liner and cap layer for placeholder source/drain contact structure planarization and replacement
GLOBALFOUNDRIES INC31 citations94
US9406676B2Aug 2, 2016
Method for forming single diffusion breaks between finFET devices and the resulting devices
GLOBALFOUNDRIES INC41 citations94
US9620380B1Apr 11, 2017
Methods for fabricating integrated circuits using self-aligned quadruple patterning
GLOBALFOUNDRIES INC31 citations93
US9087870B2Jul 21, 2015
Integrated circuits including FINFET devices with shallow trench isolation that includes a thermal oxide layer and methods for making the same
GLOBALFOUNDRIES INC18 citations92
US9443956B2Sep 13, 2016
Method for forming air gap structure using carbon-containing spacer
GLOBALFOUNDRIES INC22 citations91
US9373535B2Jun 21, 2016
T-shaped fin isolation region and methods of fabrication
GLOBALFOUNDRIES INC7 citations84
US9343371B1May 17, 2016
Fabricating fin structures with doped middle portions
GLOBALFOUNDRIES INC17 citations84
US9236481B1Jan 12, 2016
Semiconductor device and methods of forming fins and gates with ultraviolet curing
GLOBALFOUNDRIES INC6 citations84
US9196710B2Nov 24, 2015
Integrated circuits with relaxed silicon / germanium fins
GLOBALFOUNDRIES INC11 citations84
US9455201B2Sep 27, 2016
Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits
GLOBALFOUNDRIES INC18 citations83
US9129987B2Sep 8, 2015
Replacement low-K spacer
GLOBALFOUNDRIES INC7 citations80
US9647073B2May 9, 2017
Transistor structures and fabrication methods thereof
GLOBALFOUNDRIES INC2 citations73
US9401416B2Jul 26, 2016
Method for reducing gate height variation due to overlapping masks
GLOBALFOUNDRIES INC4 citations73
US9263520B2Feb 16, 2016
Facilitating fabricating gate-all-around nanowire field-effect transistors
GLOBALFOUNDRIES INC3 citations73
US9040380B2May 26, 2015
Integrated circuits having laterally confined epitaxial material overlying fin structures and methods for fabricating same
GLOBALFOUNDRIES INC6 citations70
US9230822B1Jan 5, 2016
Uniform gate height for mixed-type non-planar semiconductor devices
GLOBALFOUNDRIES INC2 citations63
US9142640B1Sep 22, 2015
Containment structure for epitaxial growth in non-planar semiconductor structure
GLOBALFOUNDRIES INC3 citations63
US9312145B2Apr 12, 2016
Conformal nitridation of one or more fin-type transistor layers
GLOBALFOUNDRIES INC2 citations61
US9147696B2Sep 29, 2015
Devices and methods of forming finFETs with self aligned fin formation
GLOBALFOUNDRIES INC2 citations61
US9076645B1Jul 7, 2015
Method of fabricating an interlayer structure of increased elasticity modulus
GLOBALFOUNDRIES INC2 citations61
US10204991B2Feb 12, 2019
Transistor structures and fabrication methods thereof
GLOBALFOUNDRIES INC0 citations52
US9368342B2Jun 14, 2016
Defect-free relaxed covering layer on semiconductor substrate with lattice mismatch
GLOBALFOUNDRIES INC0 citations52
US9142422B2Sep 22, 2015
Methods of fabricating defect-free semiconductor structures
GLOBALFOUNDRIES INC0 citations52
US9698269B2Jul 4, 2017
Conformal nitridation of one or more fin-type transistor layers
GLOBALFOUNDRIES INC1 citations51
US9673039B2Jun 6, 2017
Devices comprising high-K dielectric layer and methods of forming same
GLOBALFOUNDRIES INC0 citations47
US9595493B2Mar 14, 2017
Reducing liner corrosion during metallization of semiconductor devices
GLOBALFOUNDRIES INC0 citations42
US9419126B2Aug 16, 2016
Integrated circuits and methods for fabricating integrated circuits with active area protection
GLOBALFOUNDRIES INC0 citations42
US9472465B2Oct 18, 2016
Methods of fabricating integrated circuits
GLOBALFOUNDRIES INC0 citations40
CHARTERED SEMICONDUCTOR MFG
6 patentsUS7947546B2May 24, 2011
Implant damage control by in-situ C doping during SiGe epitaxy for device applications
CHARTERED SEMICONDUCTOR MFG17 citations92
US6995078B2Feb 7, 2006
Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch
CHARTERED SEMICONDUCTOR MFG12 citations84
US7863141B2Jan 4, 2011
Integration for buried epitaxial stressor
CHARTERED SEMICONDUCTOR MFG2 citations63
US7166522B2Jan 23, 2007
Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch
CHARTERED SEMICONDUCTOR MFG3 citations63
US7064037B2Jun 20, 2006
Silicon-germanium virtual substrate and method of fabricating the same
CHARTERED SEMICONDUCTOR MFG3 citations63
US7776699B2Aug 17, 2010
Strained channel transistor structure and method
CHARTERED SEMICONDUCTOR MFG3 citations62
EDISON OPTO DONGGUAN CO LTD
3 patentsUS9942957B1Apr 10, 2018
Light emitting diode driving circuit
EDISON OPTO DONGGUAN CO LTD2 citations67
US10694595B2Jun 23, 2020
Light emitting diode driving circuit with low harmonic distortion
EDISON OPTO DONGGUAN CO LTD0 citations44
US10321526B2Jun 11, 2019
Light emitting diode driving circuit for reducing flicker effect
EDISON OPTO DONGGUAN CO LTD0 citations36
LIU JIN PING
3 patentsUS8652892B2Feb 18, 2014
Implant damage control by in-situ C doping during sige epitaxy for device applications
LIU JIN PING2 citations60
US8105955B2Jan 31, 2012
Integrated circuit system with carbon and non-carbon silicon
LIU JIN PING0 citations50
US8754447B2Jun 17, 2014
Strained channel transistor structure and method
LIU JIN PING0 citations49