Inventor

HUTZLER MICHAEL

AT41 patents

⚠️ This page may combine multiple inventors who share the name “HUTZLER MICHAEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HUTZLER MICHAEL

INFINEON TECHNOLOGIES AUSTRIA AG

Power MOSFET with seperate gate and field plate trenches

Semiconductor device with field electrode structures in a cell area and termination structures in an edge area

Semiconductor chip with integrated series resistances

Semiconductor device with needle-shaped field plate structures

Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region

Power semiconductor device trench having field plate and gate electrode

Semiconductor device comprising planar gate and trench field electrode structure

Semiconductor device having polysilicon plugs with silicide crystallites

Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures

Layout for needle cell trench MOSFET

Stress-reduced field-effect semiconductor device and method for forming therefor

Method of producing a semiconductor device having spicular-shaped field plate structures and a current spread region

Semiconductor transistor device and method of manufacturing the same

Semiconductor device with spicular-shaped field plate structures and a current spread region

Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof

Semiconductor transistor device having a titled body contact area and method of manufacturing the same

Transistor device and method of fabricating a gate of a transistor device

Transistor device having a cell field and method of fabricating a gate of the transistor device

Power semiconductor device having a trench with control and field electrode structures

Methods of manufacturing a power MOSFET

Semiconductor chip with integrated series resistances

Method for forming a stress-reduced field-effect semiconductor device

Semiconductor device with current sensor

Semiconductor device

Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof

Semiconductor device including a vertical PN junction between a body region and a drift region

Compound semiconductor transistor with gate overvoltage protection

Semiconductor devices having field electrode trenches

Methods for forming semiconductor devices, semiconductor devices and power semiconductor devices

Semiconductor device and method for fabricating a semiconductor device

Transistor component

Semiconductor device with field electrode and contact structure

INFINEON TECHNOLOGIES AUSTRIA

Semiconductor device with buried gate electrode and gate contacts

Multiple semiconductor device trenches per cell pitch

INFINEON TECHNOLOGIES AG

Electro-mechanical switching devices

Methods of forming a silicon-insulator layer and semiconductor device having the same

BLANK OLIVER

Method of manufacturing a semiconductor device using a contact implant and a metallic recombination element and semiconductor

SEDLMAIER STEFAN

Stress-reduced field-effect semiconductor device and method for forming therefor

PATENT TREUHAND GES FUER ELEKTRISCHE GLUEHLAMPEN MBH

Method for triggering a sensor-controlled lamp

HUTZLER MICHAEL

Method of manufacturing a semiconductor device using an impurity source containing a metallic recombination element and semiconductor device

VIELEMEYER MARTIN

Gate overvoltage protection for compound semiconductor transistors