P

Inventor

LEE CHANGSEOK

KR50 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHANGSEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

45 patents
US11682622B2Jun 20, 2023

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD5 citations86
US12131905B2Oct 29, 2024

Graphene structure and method of forming the graphene structure

SAMSUNG ELECTRONICS CO LTD2 citations73
US11626282B2Apr 11, 2023

Graphene structure and method of forming graphene structure

SAMSUNG ELECTRONICS CO LTD2 citations73
US11217531B2Jan 4, 2022

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD2 citations73
US11180373B2Nov 23, 2021

Nanocrystalline graphene and method of forming nanocrystalline graphene

SAMSUNG ELECTRONICS CO LTD2 citations73
US11069619B2Jul 20, 2021

Interconnect structure and electronic device employing the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US10971451B2Apr 6, 2021

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD2 citations73
US10928723B2Feb 23, 2021

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

SAMSUNG ELECTRONICS CO LTD2 citations73
US10539868B2Jan 21, 2020

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

SAMSUNG ELECTRONICS CO LTD3 citations73
US10134628B2Nov 20, 2018

Multilayer structure including diffusion barrier layer and device including the multilayer structure

SAMSUNG ELECTRONICS CO LTD4 citations73
US9997604B2Jun 12, 2018

Electrode connecting structure including adhesion layer and electronic device including the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US9761532B2Sep 12, 2017

Hybrid interconnect structure and electronic device employing the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US11404182B2Aug 2, 2022

Conductive composite structure for electronic device, method of preparing the same, electrode for electronic device including the conductive composite structure, and electronic device including the conductive composite structure

SAMSUNG ELECTRONICS CO LTD2 citations71
US10757554B2Aug 25, 2020

Method and apparatus for managing device using at least one sensor

SAMSUNG ELECTRONICS CO LTD3 citations70
US9664401B2May 30, 2017

Method and apparatus for controlling air conditioner, and air conditioner

SAMSUNG ELECTRONICS CO LTD2 citations69
US12593449B2Mar 31, 2026

Vertical nonvolatile memory device including gate electrodes with metal-doped graphene

SAMSUNG ELECTRONICS CO LTD0 citations62
US12506074B2Dec 23, 2025

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

SAMSUNG ELECTRONICS CO LTD0 citations62
US12389630B2Aug 12, 2025

Vertical channel transistor including a graphene insertion layer beweeen a source/drain electrode and a channel pattern

SAMSUNG ELECTRONICS CO LTD0 citations62
US12378120B2Aug 5, 2025

Wiring including graphene layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12369359B2Jul 22, 2025

Thin film structure and electronic device including two-dimensional material

SAMSUNG ELECTRONICS CO LTD0 citations62
US12262527B2Mar 25, 2025

Vertical-channel cell array transistor structure and dram device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12211744B2Jan 28, 2025

Method of forming nanocrystalline graphene

SAMSUNG ELECTRONICS CO LTD0 citations62
US12061312B2Aug 13, 2024

Amorphous boron nitride film and anti-reflection coating structure including the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US11713248B2Aug 1, 2023

Method of growing graphene selectively

SAMSUNG ELECTRONICS CO LTD0 citations62
US11626502B2Apr 11, 2023

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

SAMSUNG ELECTRONICS CO LTD1 citations62
US11094538B2Aug 17, 2021

Method of forming graphene

SAMSUNG ELECTRONICS CO LTD1 citations62
US12421598B2Sep 23, 2025

Nanocrystalline graphene and method of forming nanocrystalline graphene

SAMSUNG ELECTRONICS CO LTD0 citations61
US12272402B2Apr 8, 2025

Vertical nonvolatile memory device including memory cell string

SAMSUNG ELECTRONICS CO LTD0 citations61
US12183679B2Dec 31, 2024

Interconnect structure and electronic apparatus including the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12103850B2Oct 1, 2024

Method of forming graphene

SAMSUNG ELECTRONICS CO LTD0 citations61
US12080649B2Sep 3, 2024

Semiconductor memory device and apparatus including the same

SAMSUNG ELECTRONICS CO LTD1 citations61
US11462477B2Oct 4, 2022

Interconnect structure and electronic apparatus including the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11424186B2Aug 23, 2022

Semiconductor memory device and apparatus including the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12139814B2Nov 12, 2024

Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer

SAMSUNG ELECTRONICS CO LTD0 citations59
US11624127B2Apr 11, 2023

Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer

SAMSUNG ELECTRONICS CO LTD1 citations59
US12183582B2Dec 31, 2024

Film deposition method and element including film deposited by the film deposition method

SAMSUNG ELECTRONICS CO LTD0 citations52
US11975971B2May 7, 2024

Methods of forming graphene and graphene manufacturing apparatuses

SAMSUNG ELECTRONICS CO LTD0 citations52
US11572278B2Feb 7, 2023

Method of forming graphene

SAMSUNG ELECTRONICS CO LTD0 citations52
US9721943B2Aug 1, 2017

Wiring structure and electronic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US11978704B2May 7, 2024

Wiring structure and electronic device employing the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US11149346B2Oct 19, 2021

Method of directly growing carbon material on substrate

SAMSUNG ELECTRONICS CO LTD0 citations50
US10154427B2Dec 11, 2018

Method and apparatus for managing device using at least one sensor

SAMSUNG ELECTRONICS CO LTD1 citations49
US12180584B2Dec 31, 2024

Method of fabricating hexagonal boron nitride

SAMSUNG ELECTRONICS CO LTD0 citations48
US12211904B2Jan 28, 2025

Black phosphorus-two dimensional material complex and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations44
US10090386B2Oct 2, 2018

Graphene-metal bonding structure, method of manufacturing the same, and semiconductor device having the graphene-metal bonding structure

SAMSUNG ELECTRONICS CO LTD0 citations42

KOREA ELECTRONICS TELECOMM

2 patents

INSPRIT CO LTD

1 patent

LEE CHANGSEOK

1 patent

INCOME KOREA CO LTD

1 patent