Inventor
LEE CHANGSEOK
KR50 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHANGSEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
45 patentsUS11682622B2Jun 20, 2023
Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure
SAMSUNG ELECTRONICS CO LTD5 citations86
US12131905B2Oct 29, 2024
Graphene structure and method of forming the graphene structure
SAMSUNG ELECTRONICS CO LTD2 citations73
US11626282B2Apr 11, 2023
Graphene structure and method of forming graphene structure
SAMSUNG ELECTRONICS CO LTD2 citations73
US11217531B2Jan 4, 2022
Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure
SAMSUNG ELECTRONICS CO LTD2 citations73
US11180373B2Nov 23, 2021
Nanocrystalline graphene and method of forming nanocrystalline graphene
SAMSUNG ELECTRONICS CO LTD2 citations73
US11069619B2Jul 20, 2021
Interconnect structure and electronic device employing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US10971451B2Apr 6, 2021
Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure
SAMSUNG ELECTRONICS CO LTD2 citations73
US10928723B2Feb 23, 2021
Pellicle for photomask, reticle including the same, and exposure apparatus for lithography
SAMSUNG ELECTRONICS CO LTD2 citations73
US10539868B2Jan 21, 2020
Pellicle for photomask, reticle including the same, and exposure apparatus for lithography
SAMSUNG ELECTRONICS CO LTD3 citations73
US10134628B2Nov 20, 2018
Multilayer structure including diffusion barrier layer and device including the multilayer structure
SAMSUNG ELECTRONICS CO LTD4 citations73
US9997604B2Jun 12, 2018
Electrode connecting structure including adhesion layer and electronic device including the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9761532B2Sep 12, 2017
Hybrid interconnect structure and electronic device employing the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US11404182B2Aug 2, 2022
Conductive composite structure for electronic device, method of preparing the same, electrode for electronic device including the conductive composite structure, and electronic device including the conductive composite structure
SAMSUNG ELECTRONICS CO LTD2 citations71
US10757554B2Aug 25, 2020
Method and apparatus for managing device using at least one sensor
SAMSUNG ELECTRONICS CO LTD3 citations70
US9664401B2May 30, 2017
Method and apparatus for controlling air conditioner, and air conditioner
SAMSUNG ELECTRONICS CO LTD2 citations69
US12593449B2Mar 31, 2026
Vertical nonvolatile memory device including gate electrodes with metal-doped graphene
SAMSUNG ELECTRONICS CO LTD0 citations62
US12506074B2Dec 23, 2025
Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure
SAMSUNG ELECTRONICS CO LTD0 citations62
US12389630B2Aug 12, 2025
Vertical channel transistor including a graphene insertion layer beweeen a source/drain electrode and a channel pattern
SAMSUNG ELECTRONICS CO LTD0 citations62
US12378120B2Aug 5, 2025
Wiring including graphene layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12369359B2Jul 22, 2025
Thin film structure and electronic device including two-dimensional material
SAMSUNG ELECTRONICS CO LTD0 citations62
US12262527B2Mar 25, 2025
Vertical-channel cell array transistor structure and dram device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12211744B2Jan 28, 2025
Method of forming nanocrystalline graphene
SAMSUNG ELECTRONICS CO LTD0 citations62
US12061312B2Aug 13, 2024
Amorphous boron nitride film and anti-reflection coating structure including the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US11713248B2Aug 1, 2023
Method of growing graphene selectively
SAMSUNG ELECTRONICS CO LTD0 citations62
US11626502B2Apr 11, 2023
Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure
SAMSUNG ELECTRONICS CO LTD1 citations62
US11094538B2Aug 17, 2021
Method of forming graphene
SAMSUNG ELECTRONICS CO LTD1 citations62
US12421598B2Sep 23, 2025
Nanocrystalline graphene and method of forming nanocrystalline graphene
SAMSUNG ELECTRONICS CO LTD0 citations61
US12272402B2Apr 8, 2025
Vertical nonvolatile memory device including memory cell string
SAMSUNG ELECTRONICS CO LTD0 citations61
US12183679B2Dec 31, 2024
Interconnect structure and electronic apparatus including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12103850B2Oct 1, 2024
Method of forming graphene
SAMSUNG ELECTRONICS CO LTD0 citations61
US12080649B2Sep 3, 2024
Semiconductor memory device and apparatus including the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US11462477B2Oct 4, 2022
Interconnect structure and electronic apparatus including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11424186B2Aug 23, 2022
Semiconductor memory device and apparatus including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12139814B2Nov 12, 2024
Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer
SAMSUNG ELECTRONICS CO LTD0 citations59
US11624127B2Apr 11, 2023
Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer
SAMSUNG ELECTRONICS CO LTD1 citations59
US12183582B2Dec 31, 2024
Film deposition method and element including film deposited by the film deposition method
SAMSUNG ELECTRONICS CO LTD0 citations52
US11975971B2May 7, 2024
Methods of forming graphene and graphene manufacturing apparatuses
SAMSUNG ELECTRONICS CO LTD0 citations52
US11572278B2Feb 7, 2023
Method of forming graphene
SAMSUNG ELECTRONICS CO LTD0 citations52
US9721943B2Aug 1, 2017
Wiring structure and electronic device including the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US11978704B2May 7, 2024
Wiring structure and electronic device employing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US11149346B2Oct 19, 2021
Method of directly growing carbon material on substrate
SAMSUNG ELECTRONICS CO LTD0 citations50
US10154427B2Dec 11, 2018
Method and apparatus for managing device using at least one sensor
SAMSUNG ELECTRONICS CO LTD1 citations49
US12180584B2Dec 31, 2024
Method of fabricating hexagonal boron nitride
SAMSUNG ELECTRONICS CO LTD0 citations48
US12211904B2Jan 28, 2025
Black phosphorus-two dimensional material complex and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations44
US10090386B2Oct 2, 2018
Graphene-metal bonding structure, method of manufacturing the same, and semiconductor device having the graphene-metal bonding structure
SAMSUNG ELECTRONICS CO LTD0 citations42