Inventor
AHN BYOUNG-KWAN
KR2 patents
Patents
2 patentsUS6690052B2Feb 10, 2004
Semiconductor device having a capacitor with a multi-layer dielectric
HYUNDAI ELECTRONICS IND9 citations69
US7012001B2Mar 14, 2006
Method for manufacturing a semiconductor device for use in a memory cell that includes forming a composite layer of tantalum oxide and titanium oxide over a bottom capacitor electrode
HYUNDAI ELECTRONICS IND1 citations48