Inventor
GAN CHENG
CN15 patents
⚠️ This page may combine multiple inventors who share the name “GAN CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANGTZE MEMORY TECH CO LTD
14 patentsUS11232825B2Jan 25, 2022
Capacitor structure and method of forming the same
YANGTZE MEMORY TECH CO LTD1 citations73
US11538780B2Dec 27, 2022
Structure and method for isolation of bit-line drivers for a three-dimensional NAND
YANGTZE MEMORY TECH CO LTD3 citations72
US11177343B2Nov 16, 2021
Three-dimensional memory devices with backside isolation structures
YANGTZE MEMORY TECH CO LTD2 citations72
US11031282B2Jun 8, 2021
Three-dimensional memory devices with deep isolation structures
YANGTZE MEMORY TECH CO LTD2 citations72
US11437464B2Sep 6, 2022
Structure and method for forming capacitors for a three-dimensional NAND
YANGTZE MEMORY TECH CO LTD2 citations71
US12278209B2Apr 15, 2025
Peripheral circuit having recess gate transistors and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12255164B2Mar 18, 2025
Structure and method for isolation of bit-line drivers for a three-dimensional NAND
YANGTZE MEMORY TECH CO LTD0 citations62
US12183698B2Dec 31, 2024
Structure and method for isolation of bit-line drivers for a three-dimensional NAND
YANGTZE MEMORY TECH CO LTD0 citations62
US12136449B2Nov 5, 2024
Capacitor structure and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12089413B2Sep 10, 2024
Peripheral circuit having recess gate transistors and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11887646B2Jan 30, 2024
Capacitor structure and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12389611B2Aug 12, 2025
Structure and method for forming capacitors for a three-dimensional NAND
YANGTZE MEMORY TECH CO LTD0 citations60
US11270770B2Mar 8, 2022
Local word line driver device, memory device, and fabrication method thereof
YANGTZE MEMORY TECH CO LTD0 citations59
US11264455B2Mar 1, 2022
Backside deep isolation structures for semiconductor device arrays
YANGTZE MEMORY TECH CO LTD1 citations59