Inventor
HA TAE-WON
KR19 patents
⚠️ This page may combine multiple inventors who share the name “HA TAE-WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS9698264B2Jul 4, 2017
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD12 citations92
US9515182B2Dec 6, 2016
High-integration semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations92
US9502417B2Nov 22, 2016
Semiconductor device having a substrate including a first active region and a second active region
SAMSUNG ELECTRONICS CO LTD8 citations92
US9461173B2Oct 4, 2016
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations92
US9240411B1Jan 19, 2016
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD14 citations92
US9048219B2Jun 2, 2015
High integration semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD20 citations92
US10084088B2Sep 25, 2018
Method for fabricating a semiconductor device having a first fin active pattern and a second fin active pattern
SAMSUNG ELECTRONICS CO LTD7 citations84
US9209184B2Dec 8, 2015
High-integration semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations84
US10177253B2Jan 8, 2019
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations83
US10692781B2Jun 23, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations70
US11581435B2Feb 14, 2023
Semiconductor device including a first fin active region, a second fin active region and a field region
SAMSUNG ELECTRONICS CO LTD0 citations62
US10714614B2Jul 14, 2020
Semiconductor device including a first fin active region and a second fin active region
SAMSUNG ELECTRONICS CO LTD0 citations52
US10580891B2Mar 3, 2020
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9972544B2May 15, 2018
Semiconductor device with conductive pattern on insulating line pattern on spacer on field insulating film in trench between fin patterns
SAMSUNG ELECTRONICS CO LTD1 citations49
US9099336B2Aug 4, 2015
Semiconductor device and fabricating method thereof
SAMSUNG ELECTRONICS CO LTD1 citations49
US10553693B2Feb 4, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations38