Inventor

NOH KWANG SOOK

KR14 patents

⚠️ This page may combine multiple inventors who share the name “NOH KWANG SOOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

10 patents

US7230475B2Jun 12, 2007

Semiconductor devices including an external power voltage control function and methods of operating the same

SAMSUNG ELECTRONICS CO LTD25 citations90

US9147461B1Sep 29, 2015

Semiconductor memory device performing a refresh operation, and memory system including the same

SAMSUNG ELECTRONICS CO LTD14 citations84

US6590429B2Jul 8, 2003

Data receivers for reproducing data input signals and methods for detecting data signals in data input receivers

SAMSUNG ELECTRONICS CO LTD16 citations84

US7843752B2Nov 30, 2010

Circuit and method for controlling refresh periods in semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD7 citations73

US7716550B2May 11, 2010

Semiconductor IC including pad for wafer test and method of testing wafer including semiconductor IC

SAMSUNG ELECTRONICS CO LTD3 citations62

US7541845B2Jun 2, 2009

Signal receiver apparatus and method for detecting logic state represented by an input signal and semiconductor integrated circuit device having the same

SAMSUNG ELECTRONICS CO LTD5 citations62

US6876564B2Apr 5, 2005

Integrated circuit device and method for applying different types of signals to internal circuit via one pin

SAMSUNG ELECTRONICS CO LTD6 citations61

US12517665B2Jan 6, 2026

NOH KWANG-SOOK

3 patents

US8218137B2Jul 10, 2012

Methods of operating DRAM devices having adjustable internal refresh cycles that vary in response to on-chip temperature changes

NOH KWANG-SOOK27 citations92

US8331161B2Dec 11, 2012

Semiconductor memory device having swap function for data output pads

NOH KWANG-SOOK10 citations82

US8537633B2Sep 17, 2013

Methods of operating DRAM devices having adjustable internal refresh cycles that vary in response to on-chip temperature changes

NOH KWANG-SOOK3 citations62

NOH KWANG SOOK

1 patent

US8675438B2Mar 18, 2014

Methods of operating DRAM devices having adjustable internal refresh cycles that vary in response to on-chip temperature changes

NOH KWANG SOOK4 citations83

NOH KWANG SOOK

SAMSUNG ELECTRONICS CO LTD

Semiconductor devices including an external power voltage control function and methods of operating the same

Semiconductor memory device performing a refresh operation, and memory system including the same

Data receivers for reproducing data input signals and methods for detecting data signals in data input receivers

Circuit and method for controlling refresh periods in semiconductor memory devices

Semiconductor IC including pad for wafer test and method of testing wafer including semiconductor IC

Signal receiver apparatus and method for detecting logic state represented by an input signal and semiconductor integrated circuit device having the same

Integrated circuit device and method for applying different types of signals to internal circuit via one pin

Volatile memory device

Volatile memory device

Volatile memory device

NOH KWANG-SOOK

Methods of operating DRAM devices having adjustable internal refresh cycles that vary in response to on-chip temperature changes

Semiconductor memory device having swap function for data output pads

Methods of operating DRAM devices having adjustable internal refresh cycles that vary in response to on-chip temperature changes

NOH KWANG SOOK

Methods of operating DRAM devices having adjustable internal refresh cycles that vary in response to on-chip temperature changes