Inventor
LIM JONG-KOO
KR28 patents
⚠️ This page may combine multiple inventors who share the name “LIM JONG-KOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
24 patentsUS9865806B2Jan 9, 2018
Electronic device and method for fabricating the same
SK HYNIX INC52 citations97
US9711202B2Jul 18, 2017
Electronic device
SK HYNIX INC8 citations83
US10777742B2Sep 15, 2020
Electronic device and method for fabricating the same
SK HYNIX INC2 citations73
US10170691B2Jan 1, 2019
Electronic device and method for fabricating the same
SK HYNIX INC2 citations73
US9865319B2Jan 9, 2018
Electronic device and method for fabricating the same
SK HYNIX INC2 citations73
US10395708B2Aug 27, 2019
Electronic device
SK HYNIX INC3 citations72
US10042559B2Aug 7, 2018
Electronic devices having semiconductor memory with interface enhancement layer
SK HYNIX INC2 citations72
US9865799B2Jan 9, 2018
Electronic device
SK HYNIX INC2 citations71
US10923168B2Feb 16, 2021
Method of making magnetic tunnel junction memory device with stress inducing layers
SK HYNIX INC0 citations62
US10490741B2Nov 26, 2019
Electronic device and method for fabricating the same
SK HYNIX INC1 citations62
US11730062B2Aug 15, 2023
Electronic device including thermal stability enhanced layer including homogeneous material having Fe-O bond
SK HYNIX INC0 citations61
US11770980B2Sep 26, 2023
Electronic device
SK HYNIX INC0 citations59
US10586917B2Mar 10, 2020
Electronic device and method for fabricating the same
SK HYNIX INC0 citations52
US10305030B2May 28, 2019
Electronic device and method for fabricating the same
SK HYNIX INC0 citations52
US10134458B2Nov 20, 2018
Electronic device and method for fabricating the same
SK HYNIX INC0 citations52
US10978637B2Apr 13, 2021
Method for fabricating electronic device
SK HYNIX INC0 citations51
US10685692B2Jun 16, 2020
Electronic devices and method for fabricating the same
SK HYNIX INC0 citations51
US10566041B2Feb 18, 2020
Magnetic tunnel junction memory device with stress inducing layers
SK HYNIX INC0 citations51
US10305028B2May 28, 2019
Electronic device including an under layer and a perpendicular magnetic anisotropy increasing layer having a different crystal structure from the under layer
SK HYNIX INC0 citations51
US10153423B2Dec 11, 2018
Electronic device
SK HYNIX INC0 citations51
US10062424B2Aug 28, 2018
Electronic device
SK HYNIX INC0 citations51
US10002903B2Jun 19, 2018
Electronic device and method for fabricating the same
SK HYNIX INC1 citations51
US9847474B2Dec 19, 2017
Electronic device and method for fabricating the same
SK HYNIX INC1 citations51
US9841915B1Dec 12, 2017
Electronic device
SK HYNIX INC1 citations51