Inventor
BERRY III IVAN L
US31 patents
⚠️ This page may combine multiple inventors who share the name “BERRY III IVAN L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LAM RES CORP
21 patentsUS9431268B2Aug 30, 2016
Isotropic atomic layer etch for silicon and germanium oxides
LAM RES CORP135 citations98
US9425041B2Aug 23, 2016
Isotropic atomic layer etch for silicon oxides using no activation
LAM RES CORP143 citations97
US9779955B2Oct 3, 2017
Ion beam etching utilizing cryogenic wafer temperatures
LAM RES CORP21 citations94
US9536748B2Jan 3, 2017
Use of ion beam etching to generate gate-all-around structure
LAM RES CORP22 citations94
US9406535B2Aug 2, 2016
Ion injector and lens system for ion beam milling
LAM RES CORP33 citations94
US11062920B2Jul 13, 2021
Ion injector and lens system for ion beam milling
LAM RES CORP8 citations84
US9916993B2Mar 13, 2018
Ion injector and lens system for ion beam milling
LAM RES CORP9 citations84
US10580628B2Mar 3, 2020
Differentially pumped reactive gas injector
LAM RES CORP8 citations83
US9837254B2Dec 5, 2017
Differentially pumped reactive gas injector
LAM RES CORP12 citations83
US9812349B2Nov 7, 2017
Control of the incidence angle of an ion beam on a substrate
LAM RES CORP8 citations83
US11289306B2Mar 29, 2022
Ion beam etching utilizing cryogenic wafer temperatures
LAM RES CORP2 citations73
US10998167B2May 4, 2021
Ion beam etch without need for wafer tilt or rotation
LAM RES CORP3 citations73
US10825652B2Nov 3, 2020
Ion beam etch without need for wafer tilt or rotation
LAM RES CORP5 citations73
US10483085B2Nov 19, 2019
Use of ion beam etching to generate gate-all-around structure
LAM RES CORP2 citations73
US11520953B2Dec 6, 2022
Predicting etch characteristics in thermal etching and atomic layer etching
LAM RES CORP3 citations72
US10679868B2Jun 9, 2020
Isotropic atomic layer etch for silicon oxides using no activation
LAM RES CORP3 citations71
US9911620B2Mar 6, 2018
Method for achieving ultra-high selectivity while etching silicon nitride
LAM RES CORP3 citations71
US12302760B2May 13, 2025
Ion beam etching with sidewall cleaning
LAM RES CORP0 citations63
US12029133B2Jul 2, 2024
Ion beam etching with sidewall cleaning
LAM RES CORP0 citations63
US11637022B2Apr 25, 2023
Electron excitation atomic layer etch
LAM RES CORP1 citations63
US9740104B2Aug 22, 2017
Plasma dry strip pretreatment to enhance ion implanted resist removal
LAM RES CORP0 citations40
AXCELIS TECH INC
5 patentsUS6756085B2Jun 29, 2004
Ultraviolet curing processes for advanced low-k materials
AXCELIS TECH INC685 citations98
US6759098B2Jul 6, 2004
Plasma curing of MSQ-based porous low-k film materials
AXCELIS TECH INC580 citations96
US7473909B2Jan 6, 2009
Use of ion induced luminescence (IIL) as feedback control for ion implantation
AXCELIS TECH INC3 citations63
US7011868B2Mar 14, 2006
Fluorine-free plasma curing process for porous low-k materials
AXCELIS TECH INC6 citations62
US7888661B2Feb 15, 2011
Methods for in situ surface treatment in an ion implantation system
AXCELIS TECH INC0 citations52