Inventor
CHUNG HAN-PIN
TW15 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG HAN-PIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
7 patentsUS11823960B2Nov 21, 2023
Method for forming semiconductor structure with high aspect ratio
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10840154B2Nov 17, 2020
Method for forming semiconductor structure with high aspect ratio
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10872961B2Dec 22, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9659776B2May 23, 2017
Doping for FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12369390B2Jul 22, 2025
Method for forming semiconductor structure with high aspect ratio
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12444601B2Oct 14, 2025
Semiconductor device and method of forming thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10629497B2Apr 21, 2020
FinFET device structure and method for enlarging gap-fill window
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40
TAIWAN SEMICONDUCTOR MFG
5 patentsUS9218974B2Dec 22, 2015
Sidewall free CESL for enlarging ILD gap-fill window
TAIWAN SEMICONDUCTOR MFG8 citations84
US8900957B2Dec 2, 2014
Method of dual epi process for semiconductor device
TAIWAN SEMICONDUCTOR MFG7 citations84
US8900956B2Dec 2, 2014
Method of dual EPI process for semiconductor device
TAIWAN SEMICONDUCTOR MFG5 citations84
US9362404B2Jun 7, 2016
Doping for FinFET
TAIWAN SEMICONDUCTOR MFG8 citations83
US8999834B2Apr 7, 2015
Sidewall-free CESL for enlarging ILD gap-fill window
TAIWAN SEMICONDUCTOR MFG1 citations52