Inventor
HUANG JIAN-SHIOU
TW16 patents
Patents
16 patentsUS9825117B2Nov 21, 2017
MIM/RRAM structure with improved capacitance and reduced leakage current
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9761799B2Sep 12, 2017
Bottom electrode structure for improved electric field uniformity
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9502649B2Nov 22, 2016
Bottom electrode structure for improved electric field uniformity
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9257642B1Feb 9, 2016
Protective sidewall techniques for RRAM
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations84
US9887134B2Feb 6, 2018
Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9543375B2Jan 10, 2017
MIM/RRAM structure with improved capacitance and reduced leakage current
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9450183B2Sep 20, 2016
Memory structure having top electrode with protrusion
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10361113B2Jul 23, 2019
Formation and in-situ treatment processes for gap fill layers
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10468409B2Nov 5, 2019
FinFET device with oxidation-resist STI liner structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9425061B2Aug 23, 2016
Buffer cap layer to improve MIM structure performance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12336201B2Jun 17, 2025
Capacitor structure and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11038010B2Jun 15, 2021
Capacitor structure and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10978305B2Apr 13, 2021
Manufacturing method for a film stack of a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937686B2Mar 2, 2021
Formation and in-situ treatment processes for gap fill layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10176999B2Jan 8, 2019
Semiconductor device having a multi-layer, metal-containing film
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10629497B2Apr 21, 2020
FinFET device structure and method for enlarging gap-fill window
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40