Inventor
HSIEH PING-PANG
TW23 patents
⚠️ This page may combine multiple inventors who share the name “HSIEH PING-PANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
17 patentsUS10699960B2Jun 30, 2020
Methods for improving interlayer dielectric layer topography
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations82
US10164073B2Dec 25, 2018
Apparatus and method for memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10141401B2Nov 27, 2018
Method for forming semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US9263316B2Feb 16, 2016
Method for forming a semiconductor device with void-free shallow trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11527543B2Dec 13, 2022
Polysilicon removal in word line contact region of memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations70
US11257719B2Feb 22, 2022
Methods for improving interlayer dielectric layer topography
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12376297B2Jul 29, 2025
Polysilicon removal in word line contact region of memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12041771B2Jul 16, 2024
Polysilicon removal in word line contact region of memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11581441B2Feb 14, 2023
Floating gate isolation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10629593B2Apr 21, 2020
Formation of semiconductor device with resistors having different resistances
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9711657B2Jul 18, 2017
Silicide process using OD spacers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9349785B2May 24, 2016
Formation of semiconductor device with resistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9666668B2May 30, 2017
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10103235B2Oct 16, 2018
Gate structure with multiple spacers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9653302B2May 16, 2017
Gate structure with multiple spacer and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9406519B2Aug 2, 2016
Memory device structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10818804B2Oct 27, 2020
Floating gate isolation and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
UNITED MICROELECTRONICS CORP
4 patentsUS7126189B2Oct 24, 2006
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP5 citations62
US7320907B2Jan 22, 2008
Method for controlling lattice defects at junction and method for forming LDD or S/D regions of CMOS device
UNITED MICROELECTRONICS CORP3 citations61
US7157343B2Jan 2, 2007
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations51
US7638400B2Dec 29, 2009
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations41