Inventor
JOO KYUNG-JOONG
KR7 patents
Patents
7 patentsUS6483749B1Nov 19, 2002
Nonvolatile memory device having bulk bias contact structure in cell array region
SAMSUNG ELECTRONICS CO LTD86 citations95
US7626230B2Dec 1, 2009
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD14 citations92
US6204122B1Mar 20, 2001
Methods of forming nonvolatile integrated circuit memory devices having high capacitive coupling ratios
SAMSUNG ELECTRONICS CO LTD36 citations92
US5841163ANov 24, 1998
Integrated circuit memory devices having wide and narrow channel stop layers
SAMSUNG ELECTRONICS CO LTD17 citations92
US8012829B2Sep 6, 2011
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US7825461B2Nov 2, 2010
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US6121115ASep 19, 2000
Methods of fabricating integrated circuit memory devices having wide and narrow channel stop layers
SAMSUNG ELECTRONICS CO LTD4 citations62