Inventor

TORTORELLI INNOCENZO

IT148 patents

⚠️ This page may combine multiple inventors who share the name “TORTORELLI INNOCENZO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TORTORELLI INNOCENZO

MICRON TECHNOLOGY INC

Programming enhancement in self-selecting memory

Drift mitigation with embedded refresh

Apparatuses and methods of reading memory cells based on response to a test pulse

Cross-point memory and methods for forming of the same

Apparatuses including memory cells and methods of operation of same

Apparatuses and methods including memory and operation of same

Three dimensional memory array

Method, system and device for phase change memory with shunt

Cross-point memory and methods for fabrication of same

Dopant-modulated etching for memory devices

Multi-level self-selecting memory device

Programming memory cells using asymmetric current pulses

Read refresh operation

Techniques for programming a memory cell

Apparatuses including memory cells and methods of operation of same

Three dimensional memory arrays

Apparatuses including multi-level memory cells and methods of operation of same

Memory cells having resistors and formation of the same

Apparatuses including memory cells and methods of operation of same

Structures incorporating and methods of forming metal lines including carbon

Memory cells having a heater electrode formed between a first storage material and a second storage material and methods of forming the same

Programming an array of resistance random access memory cells using unipolar pulses

Apparatuses and methods including memory and operation of same

Apparatuses and methods including memory and operation of same

Cross-point memory and methods for fabrication of same

Cross-point memory and methods for fabrication of same

Pulse based multi-level cell programming

Memory device and method for operating the same

Neural network memory

Apparatuses including multi-level memory cells and methods of operation of same

Varying-polarity read operations for polarity-written memory cells

Memory cells for storing operational data

Techniques for forming self-aligned memory structures

Memory device and method for operating the same including setting a recovery voltage

Capacitive pillar architecture for a memory array

Drift mitigation with embedded refresh

Programming enhancement in self-selecting memory

Multi-level self-selecting memory device

Multi-component cell architectures for a memory device

Sensing operations in memory

Drift mitigation with embedded refresh

Mixed cross point memory

Semiconductor devices including a passive material between memory cells and conductive access lines, and related electronic devices

INTEL CORP

Double-polarity memory read

Reset refresh techniques for self-selecting memory

Double-polarity memory read

OVONYX MEMORY TECH LLC

Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact cross references

Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact cross references

BEDESCHI FERDINANDO

Programming an array of resistance random access memory cells using unipolar pulses

TORTORELLI INNOCENZO

Forming self-aligned conductive lines for resistive random access memories