Inventor
JONES ANDREW M
US29 patents
⚠️ This page may combine multiple inventors who share the name “JONES ANDREW M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SGS THOMSON MICROELECTRONICS
12 patentsUS6598177B1Jul 22, 2003
Monitoring error conditions in an integrated circuit
SGS THOMSON MICROELECTRONICS56 citations93
US6763034B1Jul 13, 2004
Connection ports for interconnecting modules in an integrated circuit
SGS THOMSON MICROELECTRONICS19 citations92
US7000078B1Feb 14, 2006
System and method for maintaining cache coherency in a shared memory system
SGS THOMSON MICROELECTRONICS20 citations89
US6826191B1Nov 30, 2004
Packets containing transaction attributes
SGS THOMSON MICROELECTRONICS18 citations84
US6590907B1Jul 8, 2003
Integrated circuit with additional ports
SGS THOMSON MICROELECTRONICS16 citations84
US7260745B1Aug 21, 2007
Detection of information on an interconnect
SGS THOMSON MICROELECTRONICS15 citations82
US6298394B1Oct 2, 2001
System and method for capturing information on an interconnect in an integrated circuit
SGS THOMSON MICROELECTRONICS15 citations82
US7228389B2Jun 5, 2007
System and method for maintaining cache coherency in a shared memory system
SGS THOMSON MICROELECTRONICS10 citations80
US7346072B2Mar 18, 2008
Arbitration mechanism for packet transmission
SGS THOMSON MICROELECTRONICS4 citations62
US6928073B2Aug 9, 2005
Integrated circuit implementing packet transmission
SGS THOMSON MICROELECTRONICS5 citations62
US7266728B1Sep 4, 2007
Circuit for monitoring information on an interconnect
SGS THOMSON MICROELECTRONICS5 citations61
US6349371B1Feb 19, 2002
Circuit for storing information
SGS THOMSON MICROELECTRONICS5 citations61
GLOBALWAFERS CO LTD
5 patentsUS11508612B2Nov 22, 2022
Semiconductor on insulator structure comprising a buried high resistivity layer
GLOBALWAFERS CO LTD2 citations71
US11145538B2Oct 12, 2021
High resistivity silicon-on-insulator structure and method of manufacture thereof
GLOBALWAFERS CO LTD5 citations71
US11699615B2Jul 11, 2023
High resistivity semiconductor-on-insulator wafer and a method of manufacture
GLOBALWAFERS CO LTD0 citations62
US11139198B2Oct 5, 2021
High resistivity semiconductor-on-insulator wafer and a method of manufacturing
GLOBALWAFERS CO LTD0 citations62
US12557611B2Feb 17, 2026
Semiconductor on insulator structure comprising a buried high resistivity layer
GLOBALWAFERS CO LTD0 citations61
SUNEDISON SEMICONDUCTOR LTD UEN201334164H
3 patentsUS10468295B2Nov 5, 2019
High resistivity silicon-on-insulator structure and method of manufacture thereof
SUNEDISON SEMICONDUCTOR LTD UEN201334164H7 citations82
US10483152B2Nov 19, 2019
High resistivity semiconductor-on-insulator wafer and a method of manufacturing
SUNEDISON SEMICONDUCTOR LTD UEN201334164H1 citations72
US10381260B2Aug 13, 2019
Method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers
SUNEDISON SEMICONDUCTOR LTD UEN201334164H1 citations56
SUNEDISON SEMICONDUCTOR LTD
2 patentsUS10468294B2Nov 5, 2019
High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed on a substrate with a rough surface
SUNEDISON SEMICONDUCTOR LTD8 citations84
US10622247B2Apr 14, 2020
Semiconductor on insulator structure comprising a buried high resistivity layer
SUNEDISON SEMICONDUCTOR LTD3 citations71