Inventor
YAGIHASHI FUJIO
JP38 patents
⚠️ This page may combine multiple inventors who share the name “YAGIHASHI FUJIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINETSU CHEMICAL CO
25 patentsUS7754330B2Jul 13, 2010
Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device
SHINETSU CHEMICAL CO24 citations93
US7303785B2Dec 4, 2007
Antireflective film material, and antireflective film and pattern formation method using the same
SHINETSU CHEMICAL CO31 citations93
US7202013B2Apr 10, 2007
Antireflective film material, and antireflective film and pattern formation method using the same
SHINETSU CHEMICAL CO49 citations93
US6340735B1Jan 22, 2002
Coating solution and method for forming dielectric film
SHINETSU CHEMICAL CO29 citations92
US7651829B2Jan 26, 2010
Positive resist material and pattern formation method using the same
SHINETSU CHEMICAL CO9 citations84
US7405459B2Jul 29, 2008
Semiconductor device comprising porous film
SHINETSU CHEMICAL CO13 citations84
US6093240AJul 25, 2000
Binder composition and aqueous coating composition
SHINETSU CHEMICAL CO19 citations84
US7244657B2Jul 17, 2007
Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
SHINETSU CHEMICAL CO5 citations74
US5935311AAug 10, 1999
Water-resistant ink composition and writing instrument
SHINETSU CHEMICAL CO15 citations74
US5691112ANov 25, 1997
Sulfonium salt and chemically amplified positive resist composition
SHINETSU CHEMICAL CO9 citations74
US5633409AMay 27, 1997
Tristertbutoxyphenyl sulfonium tosylate compound
SHINETSU CHEMICAL CO10 citations74
US5523370AJun 4, 1996
Poly(para-T-butoxycarbonyloxystyrene) and method of making
SHINETSU CHEMICAL CO7 citations74
US5314931AMay 24, 1994
Resist compositions
SHINETSU CHEMICAL CO11 citations74
US6841334B2Jan 11, 2005
Onium salts and positive resist materials using the same
SHINETSU CHEMICAL CO6 citations73
US5629134AMay 13, 1997
Chemically amplified positive resist composition
SHINETSU CHEMICAL CO16 citations73
US5412050AMay 2, 1995
Polymer having a narrow dispersion of molecular weight and a manufacturing process thereof
SHINETSU CHEMICAL CO7 citations73
US7402621B2Jul 22, 2008
Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device
SHINETSU CHEMICAL CO7 citations71
US8715913B2May 6, 2014
Silicon-containing resist underlayer film-forming composition and patterning process
SHINETSU CHEMICAL CO2 citations63
US7309722B2Dec 18, 2007
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
SHINETSU CHEMICAL CO4 citations63
US6680107B2Jan 20, 2004
Film forming composition, porous film and their preparation
SHINETSU CHEMICAL CO3 citations63
US6667415B1Dec 23, 2003
Tertiary butyl 4,4-bis(4′-hydroxyphenyl) pentanoate derivatives and positive resist materials containing the same
SHINETSU CHEMICAL CO2 citations63
US5252691AOct 12, 1993
P-vinylphenoxydimethylphenylcarbyldimethylsilane homopolymer
SHINETSU CHEMICAL CO5 citations63
US6001422ADec 14, 1999
Method for finishing treatment of a fabric material
SHINETSU CHEMICAL CO5 citations62
US7786022B2Aug 31, 2010
Method for forming insulating film with low dielectric constant
SHINETSU CHEMICAL CO1 citations52
US7332446B2Feb 19, 2008
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device
SHINETSU CHEMICAL CO1 citations52
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
8 patentsUS7132473B2Nov 7, 2006
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations84
US7119354B2Oct 10, 2006
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US7084505B2Aug 1, 2006
Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations84
US7357961B2Apr 15, 2008
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US7239018B2Jul 3, 2007
Composition for forming a porous film prepared by hydrolysis and condensation of an alkoxysilane using a trialkylmethylammonium hydroxide catalyst
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations63
US7126208B2Oct 24, 2006
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US7341775B2Mar 11, 2008
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations52
US7205338B2Apr 17, 2007
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations42