Inventor
CHAUDHURI REET
US3 patents
Patents
3 patentsUS11522080B2Dec 6, 2022
High-voltage p-channel FET based on III-nitride heterostructures
UNIV CORNELL0 citations45
US11710785B2Jul 25, 2023
RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltages
UNIV CORNELL0 citations43
US11158709B2Oct 26, 2021
Polarization-induced 2D hole gases for high-voltage p-channel transistors
UNIV CORNELL0 citations40