Inventor
LAI TE-YANG
TW31 patents
Patents
31 patentsUS12015066B2Jun 18, 2024
Triple layer high-k gate dielectric stack for workfunction engineering
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations74
US11848370B2Dec 19, 2023
Semiconductor device and manufacturing method for the semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11309398B2Apr 19, 2022
Semiconductor device and manufacturing method for the semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11011372B2May 18, 2021
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12588231B2Mar 24, 2026
Method of gap filling for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12568662B2Mar 3, 2026
Semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12501689B2Dec 16, 2025
Nanostructure field-effect transistor device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12387935B2Aug 12, 2025
Dipole-engineered high-k gate dielectric and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12382671B2Aug 5, 2025
Semiconductor structure and manufacturing method for the semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12322595B2Jun 3, 2025
Semiconductor devices devices including crystallized layer having multiple crystalline orientations and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12300738B2May 13, 2025
Semiconductor device and manufacturing method for the semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12243932B2Mar 4, 2025
Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12136659B2Nov 5, 2024
Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12125706B2Oct 22, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12033853B2Jul 9, 2024
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12020941B2Jun 25, 2024
Dipole-engineered high-k gate dielectric and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11824104B2Nov 21, 2023
Method of gap filling for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11823894B2Nov 21, 2023
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11817489B2Nov 14, 2023
Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11791216B2Oct 17, 2023
Nanostructure field-effect transistor device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11784052B2Oct 10, 2023
Dipole-engineered high-k gate dielectric and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11777031B2Oct 3, 2023
Semiconductor structure and manufacturing method for the semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11777017B2Oct 3, 2023
Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11710665B2Jul 25, 2023
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11264489B2Mar 1, 2022
Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11257950B2Feb 22, 2022
Semiconductor structure and manufacturing method for the semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11171219B2Nov 9, 2021
Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11101180B2Aug 24, 2021
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10985266B2Apr 20, 2021
Method of gap filling for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12598784B2Apr 7, 2026
Semiconductor device having doped gate dielectric layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12417918B2Sep 16, 2025
Semiconductor device having doped gate dielectric layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50