Inventor

SEO KANG-ILL

US104 patents

⚠️ This page may combine multiple inventors who share the name “SEO KANG-ILL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SEO KANG-ILL

SAMSUNG ELECTRONICS CO LTD

Semiconductor device having a gate all around structure

Semiconductor device having a fin

Semiconductor device

Non-volatile memory device having self-aligned gate structure and method of manufacturing same

Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same

Semiconductor device having nanowire

Semiconductor device and method of fabricating the same

Semiconductor device having gate-all-around transistor and method of manufacturing the same

Method for fabricating semiconductor device

FinFET-based semiconductor device with dummy gates

Methods of fabricating non-planar transistors including current enhancing structures

Semiconductor device and method of fabricating the same

Semiconductor device having a gate all around structure and a method for fabricating the same

Method of fabricating cell of flash memory device

Semiconductor device having stepped multi-stack transistor structure

Semiconductor device having a fin

Semiconductor device having fin-type field effect transistor and method of manufacturing the same

Semiconductor device

Semiconductor device

Semiconductor device having fin-type field effect transistor and method of manufacturing the same

Semiconductor device and method for fabricating the same

Method for fabricating semiconductor device

Method of fabricating semiconductor device

Methods of forming a Field Effect Transistor, including forming a region providing enhanced oxidation

Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods

Devices including stacked nanosheet transistors

Semiconductor device and fabricating method thereof

Integrated circuit devices including a power rail and methods of forming the same

Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same

Integrated circuit with buried power rail and methods of manufacturing the same

Semiconductor device having fin-type field effect transistor and method of manufacturing the same

Method of manufacturing an integrated circuit with buried power rail

Semiconductor device having fin-type field effect transistor and method of manufacturing the same

Semiconductor device including vertical field effect transistors having different gate lengths

Different diffusion break structures for three-dimensional stacked semiconductor device

Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chip

Semiconductor device including backside contact structure with silicide layer formed in FEOL process

Step-stacked nanowire CMOS structure for low power logic device and method of manufacturing the same

Integrated circuit devices including a metal resistor and methods of forming the same

Integrated circuit devices including stacked transistors and methods of forming the same

Devices including stacked nanosheet transistors

Resistance measuring structures of stacked devices

Selective single diffusion/electrical barrier

Multi-stack semiconductor device with zebra nanosheet structure

Diode structures of stacked devices and methods of forming the same

KIM DONG-KWON

Semiconductor device having nanowire channel

MING LI

Methods of fabricating devices including source/drain region with abrupt junction profile

SEO KANG-ILL

Integrated circuit devices having air-gap spacers defined by conductive patterns and methods of manufacturing the same

SUK SUNG-DAE

Semiconductor device and fabricating method thereof

SEO KANG ILL

Integrated circuit devices having air-gap spacers above gate electrodes