Inventor
ZHANG LINGGUO
CN9 patents
Patents
9 patentsUS12127398B2Oct 22, 2024
Method for manufacturing memory using pseudo bit line structures and sacrificial layers
CHANGXIN MEMORY TECH INC0 citations61
US11985815B2May 14, 2024
Method for manufacturing memory and same
CHANGXIN MEMORY TECH INC0 citations50
US11974427B2Apr 30, 2024
Manufacturing method of a memory and a memory
CHANGXIN MEMORY TECH INC0 citations50
US11856758B2Dec 26, 2023
Method for manufacturing memory and same
CHANGXIN MEMORY TECH INC0 citations50
US12419041B2Sep 16, 2025
Method for forming storage node contact structure and semiconductor structure
CHANGXIN MEMORY TECH INC0 citations49
US11871562B2Jan 9, 2024
Method for forming storage node contact structure and semiconductor structure
CHANGXIN MEMORY TECH INC0 citations49
US12342535B2Jun 24, 2025
Memory forming method and memory
CHANGXIN MEMORY TECH INC0 citations48
US12178036B2Dec 24, 2024
Method for forming memory and memory
CHANGXIN MEMORY TECH INC0 citations48
US12127397B2Oct 22, 2024
Memory device and method for forming the same
CHANGXIN MEMORY TECH INC0 citations48