Inventor

LI LAIN-JONG

TW73 patents

⚠️ This page may combine multiple inventors who share the name “LI LAIN-JONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LI LAIN-JONG

TAIWAN SEMICONDUCTOR MFG CO LTD

Semiconductor device and method of manufacturing semiconductor device

Resistive memory devices using a carbon-based conductor line and methods for forming the same

Resistive memory devices using a carbon-based conductor line and methods for forming the same

Low dimensional material device and method

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device and manufacturing method thereof

Field effect transistor using transition metal dichalcogenide and a method for forming the same

Semiconductor device and manufacturing method thereof

Resistive memory devices using a carbon-based conductor line and methods for forming the same

Semiconductor device with two-dimensional materials

Fin field-effect transistor device with low-dimensional material and method

Nano transistors with source/drain having side contacts to 2-D material

Semiconductor device and method of fabricating the same

Nano transistors with source/drain having side contacts to 2-D material

Transistors with channels formed of low-dimensional materials and method forming same

Semiconductor device with two-dimensional materials

Fin field-effect transistor device with low-dimensional material and method

Field effect transistor and method of manufacturing the same

Semiconductor device

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device

Field effect transistor using transition metal dichalcogenide and a method for forming the same

TAIWAN SEMICONDUCTOR MFG

Method for forming low dielectric constant damascene structure while employing carbon doped silicon oxide planarizing stop layer

Method to improve the crack resistance of CVD low-k dielectric constant material

Solution to black diamond film delamination problem

Graded dielectric layer and method for fabrication thereof

Soft plasma oxidizing plasma method for forming carbon doped silicon containing dielectric layer with enhanced adhesive properties

Solution to black diamond film delamination problem

Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant

Composite etching stop in semiconductor process integration

Adhesion enhancement between CVD dielectric and spin-on low-k silicate films

Physical vapor deposition of an amorphous silicon liner to eliminate resist poisoning

ATR-FTIR metal surface cleanliness monitoring

Method for forming low dielectric constant damascene structure while employing a carbon doped silicon oxide capping layer

System for detecting surface defects in semiconductor wafers

Thin interface layer to improve copper etch stop

Method to improve stability and reliability of CVD low K dielectric

Method of fabricating barrierless and embedded copper damascene interconnects

Composite etching stop in semiconductor process integration

LI LAIN-JONG

Preparation of graphene sheets

Direct growth of graphene on substrates

UNIV KING ABDULLAH SCI & TECH

Method for growing a transition metal dichalcogenide layer, transition metal dichalcogenide growth device, and method for forming a semiconductor device

Lithium-sulfur battery, a dual blocking layer, methods of making, and methods of use thereof

TAIWAN SEMICONDUCTOR MANFACTUR

Method to reduce via poison in low-k Cu dual damascene by UV-treatment

SHI YUMENG

Fabrication of large-area hexagonal boron nitride thin films

ACADEMIA SINICA

Graphene-containing electrodes

NAT INST CHUNG SHAN SCIENCE & TECHNOLOGY

Method for producing thin graphene nanoplatelets and precusor thereof

MASSACHUSETTS INST TECHNOLOGY

Synthesis and transfer of metal dichalcogenide layers on diverse surfaces