Inventor
PORE VILJAMI
FI69 patents
⚠️ This page may combine multiple inventors who share the name “PORE VILJAMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ASM IP HOLDING BV
43 patentsUS10395917B2Aug 27, 2019
Si precursors for deposition of SiN at low temperatures
ASM IP HOLDING BV405 citations99
US10177025B2Jan 8, 2019
Method and apparatus for filling a gap
ASM IP HOLDING BV418 citations99
US10741386B2Aug 11, 2020
Deposition of SiN
ASM IP HOLDING BV282 citations98
US10424477B2Sep 24, 2019
Si precursors for deposition of SiN at low temperatures
ASM IP HOLDING BV298 citations98
US9887082B1Feb 6, 2018
Method and apparatus for filling a gap
ASM IP HOLDING BV466 citations98
US9824881B2Nov 21, 2017
Si precursors for deposition of SiN at low temperatures
ASM IP HOLDING BV304 citations98
US9812320B1Nov 7, 2017
Method and apparatus for filling a gap
ASM IP HOLDING BV475 citations98
US10872765B2Dec 22, 2020
Selective layer formation using deposition and removing
ASM IP HOLDING BV26 citations94
US9905416B2Feb 27, 2018
Si precursors for deposition of SiN at low temperatures
ASM IP HOLDING BV19 citations94
US9576792B2Feb 21, 2017
Deposition of SiN
ASM IP HOLDING BV23 citations94
US9564309B2Feb 7, 2017
Si precursors for deposition of SiN at low temperatures
ASM IP HOLDING BV29 citations94
US9362109B2Jun 7, 2016
Deposition of boron and carbon containing materials
ASM IP HOLDING BV11 citations93
US10991573B2Apr 27, 2021
Uniform deposition of SiOC on dielectric and metal surfaces
ASM IP HOLDING BV12 citations85
US10262854B2Apr 16, 2019
Deposition of SiN
ASM IP HOLDING BV6 citations84
US10208379B2Feb 19, 2019
Synthesis and use of precursors for ALD of group VA element containing thin films
ASM IP HOLDING BV5 citations84
US9922817B2Mar 20, 2018
Deposition of boron and carbon containing materials
ASM IP HOLDING BV8 citations84
US9543140B2Jan 10, 2017
Deposition of boron and carbon containing materials
ASM IP HOLDING BV6 citations84
US9401273B2Jul 26, 2016
Atomic layer deposition of silicon carbon nitride based materials
ASM IP HOLDING BV5 citations84
US11170993B2Nov 9, 2021
Selective PEALD of oxide on dielectric
ASM IP HOLDING BV8 citations83
US11728164B2Aug 15, 2023
Selective PEALD of oxide on dielectric
ASM IP HOLDING BV4 citations74
US11643726B2May 9, 2023
Methods for forming a layer comprising a condensing and a curing step
ASM IP HOLDING BV2 citations73
US11289327B2Mar 29, 2022
Si precursors for deposition of SiN at low temperatures
ASM IP HOLDING BV1 citations73
US11069522B2Jul 20, 2021
Si precursors for deposition of SiN at low temperatures
ASM IP HOLDING BV3 citations73
US10941487B2Mar 9, 2021
Synthesis and use of precursors for ALD of group VA element containing thin films
ASM IP HOLDING BV1 citations73
US10741385B2Aug 11, 2020
Method and apparatus for filling a gap
ASM IP HOLDING BV1 citations73
US10515794B2Dec 24, 2019
Atomic layer deposition of silicon carbon nitride based materials
ASM IP HOLDING BV3 citations73
US10410856B2Sep 10, 2019
Deposition of boron and carbon containing materials
ASM IP HOLDING BV2 citations73
US10199211B2Feb 5, 2019
Atomic layer deposition of silicon carbon nitride based materials
ASM IP HOLDING BV3 citations73
US9837263B2Dec 5, 2017
Atomic layer deposition of silicon carbon nitride based materials
ASM IP HOLDING BV3 citations73
US9828674B2Nov 28, 2017
Synthesis and use of precursors for ALD of group VA element containing thin films
ASM IP HOLDING BV2 citations73
US11830732B2Nov 28, 2023
Selective passivation and selective deposition
ASM IP HOLDING BV2 citations72
US11798834B2Oct 24, 2023
Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
ASM IP HOLDING BV1 citations72
US11342216B2May 24, 2022
Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
ASM IP HOLDING BV3 citations72
US11227789B2Jan 18, 2022
Method and apparatus for filling a recess formed within a substrate surface
ASM IP HOLDING BV2 citations72
US12584221B2Mar 24, 2026
Methods and systems for depositing a layer
ASM IP HOLDING BV0 citations63
US12406881B2Sep 2, 2025
Methods and systems for filling a gap
ASM IP HOLDING BV1 citations63
US12525449B2Jan 13, 2026
Method and apparatus for filling a gap
ASM IP HOLDING BV0 citations62
US12463094B2Nov 4, 2025
Multiple-layer method and system for forming material within a gap
ASM IP HOLDING BV0 citations62
US11996286B2May 28, 2024
Silicon precursors for silicon nitride deposition
ASM IP HOLDING BV0 citations62
US11990333B2May 21, 2024
Method and apparatus for filling a gap
ASM IP HOLDING BV0 citations62
US11694892B2Jul 4, 2023
Method and apparatus for filling a gap
ASM IP HOLDING BV0 citations62
US11610775B2Mar 21, 2023
Method and apparatus for filling a gap
ASM IP HOLDING BV0 citations62
US11587783B2Feb 21, 2023
Si precursors for deposition of SiN at low temperatures
ASM IP HOLDING BV0 citations62
ASM INT NV
5 patentsUS10308673B2Jun 4, 2019
Synthesis and use of precursors for ALD of tellurium and selenium thin films
ASM INT NV4 citations84
US9783563B2Oct 10, 2017
Synthesis and use of precursors for ALD of tellurium and selenium thin films
ASM INT NV4 citations84
US11814400B2Nov 14, 2023
Synthesis and use of precursors for ALD of tellurium and selenium thin films
ASM INT NV2 citations73
US11072622B2Jul 27, 2021
Synthesis and use of precursors for ALD of tellurium and selenium thin films
ASM INT NV2 citations73
US9646820B2May 9, 2017
Methods for forming conductive titanium oxide thin films
ASM INT NV3 citations73
PORE VILJAMI
2 patentsShowing the top 50 of 69 patents by PatentIndex Score.