Inventor
WU HONG-JANG
TW2 patents
Patents
2 patentsUS11211323B2Dec 28, 2021
Method of fabricating field effect transistor having non-orthogonal gate electrode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US10276488B2Apr 30, 2019
Method of fabricating field effect transistor having non-orthogonal gate electrode
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations57