Inventor

HWANG SHENG-KAI

TW2 patents

Patents

2 patents

US5780903AJul 14, 1998

Method of fabricating a lightly doped drain thin-film transistor

IND TECH RES INST17 citations89

US5637519AJun 10, 1997

Method of fabricating a lightly doped drain thin-film transistor

IND TECH RES INST38 citations89