Inventor

OKAYAMA REIKO

JP2 patents

Patents

2 patents

US10822718B2Nov 3, 2020

Method for producing aluminum nitride single crystal substrate

TOKUYAMA CORP2 citations69

US9708733B2Jul 18, 2017

Method for manufacturing aluminum-based group III nitride single crystal by hydride vapor phase epitaxy

TOKUYAMA CORP0 citations32