Inventor
FOSTER JOHN CLAYTON
US4 patents
Patents
4 patentsUS6605513B2Aug 12, 2003
Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing
ADVANCED MICRO DEVICES INC16 citations83
US6784506B2Aug 31, 2004
Silicide process using high K-dielectrics
ADVANCED MICRO DEVICES INC10 citations73
US6764912B1Jul 20, 2004
Passivation of nitride spacer
ADVANCED MICRO DEVICES INC6 citations62
US6458679B1Oct 1, 2002
Method of making silicide stop layer in a damascene semiconductor structure
ADVANCED MICRO DEVICES INC5 citations62