Inventor

NAKASHIMA MOTOKI

JP51 patents

⚠️ This page may combine multiple inventors who share the name “NAKASHIMA MOTOKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAKASHIMA MOTOKI

SEMICONDUCTOR ENERGY LAB

Semiconductor device and method for manufacturing the same

Semiconductor device including metal oxide film

Semiconductor device and method for manufacturing the same

Oxide material and semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device and method for manufacturing the same

Semiconductor device

Method of manufacturing a semiconductor device having an oxide semiconductor layer with increased hydrogen concentration

Method for manufacturing a thin film semiconductor device

Semiconductor device having specified relative material concentration between In—Ga—Zn—O films

Metal oxide and semiconductor device

Sputtering target and method for manufacturing the same

C-axis alignment of an oxide film over an oxide semiconductor film

Sputtering target, method for manufacturing sputtering target, and method for forming thin film

Semiconductor device and method for manufacturing the same

Semiconductor device having an oxide film on an oxide semiconductor film

Transistor, circuit, semiconductor device, display device, and electronic device

Semiconductor device and manufacturing method thereof

Oxide material and semiconductor device

Semiconductor device having specified relative material concentration between In—Ga—Zn—O films

Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device

Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device

Oxide material and semiconductor device

Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device

Oxide material and semiconductor device

Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device

Oxide material and semiconductor device

Oxide material and semiconductor device

Metal oxide and semiconductor device

Manufacturing method of semiconductor device

Sputtering target, method for manufacturing sputtering target, and method for forming thin film

Semiconductor device

Semiconductor device comprising oxide semiconductor film

Sputtering target and method for manufacturing the same

Semiconductor device

Sputtering target, method for manufacturing sputtering target, and method for forming thin film

Metal oxide and semiconductor device

Metal oxide and semiconductor device

Semiconductor device

Semiconductor device

Oxide material and semiconductor device

Semiconductor device having dual gate insulating layers

Semiconductor device including oxide semiconductor film

Method for manufacturing semiconductor substrate by using monitor substrate to obtain optimal energy density for laser irradiation of single crystal semiconductor layers

YAMAZAKI SHUNPEI

Sputtering target, method for manufacturing sputtering target, and method for forming thin film

Method for forming thin film utilizing sputtering target

Oxide material and semiconductor device

Oxide material and semiconductor device

IWAKI YUJI

Method of calculating carrier mobility

SHIMOMURA AKIHISA

Semiconductor device having single crystal silicon layer with local maximum of carbon concentration and shoulder peak of hydrogen concentration