Inventor
PAUL ABHIJEET
US35 patents
⚠️ This page may combine multiple inventors who share the name “PAUL ABHIJEET”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PSEMI CORP
15 patentsUS10115787B1Oct 30, 2018
Low leakage FET
PSEMI CORP16 citations92
US10580903B2Mar 3, 2020
Semiconductor-on-insulator transistor with improved breakdown characteristics
PSEMI CORP14 citations86
US11133338B2Sep 28, 2021
SLT integrated circuit capacitor structure and methods
PSEMI CORP4 citations84
US10777636B1Sep 15, 2020
High density IC capacitor structure
PSEMI CORP9 citations84
US10672806B2Jun 2, 2020
High-Q integrated circuit inductor structure and methods
PSEMI CORP9 citations84
US10573674B2Feb 25, 2020
SLT integrated circuit capacitor structure and methods
PSEMI CORP10 citations84
US10319854B1Jun 11, 2019
High voltage switching device
PSEMI CORP6 citations84
US11652112B2May 16, 2023
SLT integrated circuit capacitor structure and methods
PSEMI CORP1 citations73
US11469296B2Oct 11, 2022
Low leakage FET
PSEMI CORP2 citations73
US11335704B2May 17, 2022
Low parasitic capacitance RF transistors
PSEMI CORP2 citations73
US10923592B2Feb 16, 2021
High voltage switching device
PSEMI CORP1 citations73
US10756166B2Aug 25, 2020
Low leakage FET
PSEMI CORP3 citations73
US11437404B2Sep 6, 2022
Thermal extraction of single layer transfer integrated circuits
PSEMI CORP2 citations71
US10658386B2May 19, 2020
Thermal extraction of single layer transfer integrated circuits
PSEMI CORP4 citations71
US11276749B2Mar 15, 2022
High density IC capacitor structure
PSEMI CORP1 citations62
GLOBALFOUNDRIES INC
8 patentsUS9023705B1May 5, 2015
Methods of forming stressed multilayer FinFET devices with alternative channel materials
GLOBALFOUNDRIES INC27 citations92
US8889500B1Nov 18, 2014
Methods of forming stressed fin channel structures for FinFET semiconductor devices
GLOBALFOUNDRIES INC28 citations92
US9362277B2Jun 7, 2016
FinFET with multilayer fins for multi-value logic (MVL) applications and method of forming
GLOBALFOUNDRIES INC5 citations83
US8975142B2Mar 10, 2015
FinFET channel stress using tungsten contacts in raised epitaxial source and drain
GLOBALFOUNDRIES INC14 citations83
US10756213B2Aug 25, 2020
FinFET with multilayer fins for multi-value logic (MVL) applications
GLOBALFOUNDRIES INC1 citations72
US10388790B2Aug 20, 2019
FinFET with multilayer fins for multi-value logic (MVL) applications and method of forming
GLOBALFOUNDRIES INC4 citations72
US9219062B2Dec 22, 2015
Integrated circuits with improved source/drain contacts and methods for fabricating such integrated circuits
GLOBALFOUNDRIES INC5 citations69
US9117930B2Aug 25, 2015
Methods of forming stressed fin channel structures for FinFET semiconductor devices
GLOBALFOUNDRIES INC0 citations41
QUALCOMM INC
8 patentsUS11682632B2Jun 20, 2023
Integrated device comprising periphery structure configured as an electrical guard ring and a crack stop
QUALCOMM INC2 citations73
US12455255B2Oct 28, 2025
CMOS integrated humidity sensor with built-in heater
QUALCOMM INC0 citations61
US12155381B2Nov 26, 2024
Dynamic body biasing for radio frequency (RF) switch
QUALCOMM INC0 citations61
US12322461B2Jun 3, 2025
Dielectric film based one-time programmable (OTP) memory cell
QUALCOMM INC0 citations52
US12228538B2Feb 18, 2025
Moisture sensor having integrated heating element
QUALCOMM INC0 citations52
US11948978B2Apr 2, 2024
Field-effect transistors (FETs) employing edge transistor current leakage suppression to reduce FET current leakage
QUALCOMM INC0 citations52
US12310046B2May 20, 2025
Enhanced MOSFET with superior RF performance
QUALCOMM INC0 citations50
US12206400B2Jan 21, 2025
Dynamic body biasing for radio frequency (RF) switch
QUALCOMM INC0 citations50
MURATA MANUFACTURING CO
4 patentsUS12100734B2Sep 24, 2024
Low leakage FET
MURATA MANUFACTURING CO0 citations62
US12062669B2Aug 13, 2024
SLT integrated circuit capacitor structure and methods
MURATA MANUFACTURING CO0 citations62
US12027623B2Jul 2, 2024
High voltage switching device
MURATA MANUFACTURING CO0 citations62
US12113069B2Oct 8, 2024
Thermal extraction of single layer transfer integrated circuits
MURATA MANUFACTURING CO0 citations61