P

Inventor

VILLA FLAVIO

IT51 patents
⚠️ This page may combine multiple inventors who share the name “VILLA FLAVIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ST MICROELECTRONICS SRL

27 patents
US7294536B2Nov 13, 2007

Process for manufacturing an SOI wafer by annealing and oxidation of buried channels

ST MICROELECTRONICS SRL45 citations96
US6670257B1Dec 30, 2003

Method for forming horizontal buried channels or cavities in wafers of monocrystalline semiconductor material

ST MICROELECTRONICS SRL71 citations96
US6376291B1Apr 23, 2002

Process for manufacturing buried channels and cavities in semiconductor material wafers

ST MICROELECTRONICS SRL56 citations96
US6727479B2Apr 27, 2004

Integrated device based upon semiconductor technology, in particular chemical microreactor

ST MICROELECTRONICS SRL47 citations94
US7452713B2Nov 18, 2008

Process for manufacturing a microfluidic device with buried channels

ST MICROELECTRONICS SRL39 citations93
US6770471B2Aug 3, 2004

Integrated chemical microreactor, thermally insulated from detection electrodes, and manufacturing and operating methods therefor

ST MICROELECTRONICS SRL29 citations93
US6673593B2Jan 6, 2004

Integrated device for microfluid thermoregulation, and manufacturing process thereof

ST MICROELECTRONICS SRL42 citations93
US6992367B2Jan 31, 2006

Process for forming a buried cavity in a semiconductor material wafer and a buried cavity

ST MICROELECTRONICS SRL18 citations92
US6710311B2Mar 23, 2004

Process for manufacturing integrated chemical microreactors of semiconductor material

ST MICROELECTRONICS SRL30 citations92
US6693039B2Feb 17, 2004

Process for forming a buried cavity in a semiconductor material wafer and a buried cavity

ST MICROELECTRONICS SRL17 citations92
US6362070B1Mar 26, 2002

Process for manufacturing a SOI wafer with buried oxide regions without cusps

ST MICROELECTRONICS SRL23 citations92
US7071073B2Jul 4, 2006

Process for manufacturing low-cost and high-quality SOI substrates

ST MICROELECTRONICS SRL18 citations84
US5605850AFeb 25, 1997

Method for making a low-noise bipolar transistor

ST MICROELECTRONICS SRL17 citations82
US7754578B2Jul 13, 2010

Process for manufacturing a wafer by annealing of buried channels

ST MICROELECTRONICS SRL5 citations74
US6974693B2Dec 13, 2005

Integrated chemical microreactor, thermally insulated from detection electrodes, and manufacturing and operating methods therefor

ST MICROELECTRONICS SRL9 citations74
US6506663B1Jan 14, 2003

Method for producing an SOI wafer

ST MICROELECTRONICS SRL10 citations74
US6350657B1Feb 26, 2002

Inexpensive method of manufacturing an SOI wafer

ST MICROELECTRONICS SRL8 citations74
US5602417AFeb 11, 1997

Low-noise bipolar transistor operating predominantly in the bulk region

ST MICROELECTRONICS SRL12 citations74
US6529140B1Mar 4, 2003

Magnetic bi-dimensional position sensor

ST MICROELECTRONICS SRL9 citations71
US7906321B2Mar 15, 2011

Integrated semiconductor microreactor for real-time monitoring of biological reactions

ST MICROELECTRONICS SRL3 citations63
US7705416B2Apr 27, 2010

Method for forming horizontal buried channels or cavities in wafers of monocrystalline semiconductor material

ST MICROELECTRONICS SRL3 citations63
US6759132B2Jul 6, 2004

Method for the manufacture of electromagnetic radiation reflecting devices

ST MICROELECTRONICS SRL4 citations63
US6559035B2May 6, 2003

Method for manufacturing an SOI wafer

ST MICROELECTRONICS SRL5 citations63
US6455391B1Sep 24, 2002

Method of forming structures with buried regions in a semiconductor device

ST MICROELECTRONICS SRL3 citations63
US6909073B2Jun 21, 2005

Integrated device based upon semiconductor technology, in particular chemical microreactor

ST MICROELECTRONICS SRL3 citations61
US7009154B2Mar 7, 2006

Process for manufacturing integrated chemical microreactors of semiconductor material

ST MICROELECTRONICS SRL0 citations52
US6929968B2Aug 16, 2005

Integrated chemical microreactor, thermally insulated from detection electrodes, and manufacturing and operating methods therefor

ST MICROELECTRONICS SRL0 citations52

SGS THOMSON MICROELECTRONICS

16 patents
US5530345AJun 25, 1996

An integrated hall•effect apparatus for detecting the position of a magnetic element

SGS THOMSON MICROELECTRONICS107 citations98
US5855693AJan 5, 1999

Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication

SGS THOMSON MICROELECTRONICS63 citations96
US6472244B1Oct 29, 2002

Manufacturing method and integrated microstructures of semiconductor material and integrated piezoresistive pressure sensor having a diaphragm of polycrystalline semiconductor material

SGS THOMSON MICROELECTRONICS46 citations93
US6171931B1Jan 9, 2001

Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication

SGS THOMSON MICROELECTRONICS28 citations93
US6131466AOct 17, 2000

Integrated piezoresistive pressure sensor

SGS THOMSON MICROELECTRONICS31 citations93
US5883009AMar 16, 1999

Method of fabricating integrated semiconductor devices comprising a chemoresistive gas microsensor

SGS THOMSON MICROELECTRONICS47 citations93
US5828124AOct 27, 1998

Low-noise bipolar transistor

SGS THOMSON MICROELECTRONICS28 citations93
US5756387AMay 26, 1998

Method for forming zener diode with high time stability and low noise

SGS THOMSON MICROELECTRONICS27 citations93
US6232140B1May 15, 2001

Semiconductor integrated capacitive acceleration sensor and relative fabrication method

SGS THOMSON MICROELECTRONICS30 citations92
US6104073AAug 15, 2000

Semiconductor integrated capacitive acceleration sensor and relative fabrication method

SGS THOMSON MICROELECTRONICS20 citations92
US5583365ADec 10, 1996

Fully depleted lateral transistor

SGS THOMSON MICROELECTRONICS24 citations92
US5434445AJul 18, 1995

Junction-isolated high-voltage MOS integrated device

SGS THOMSON MICROELECTRONICS25 citations92
US6417021B1Jul 9, 2002

Method of fabricating a piezoresistive pressure sensor

SGS THOMSON MICROELECTRONICS12 citations74
US4979008ADec 18, 1990

Vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components

SGS THOMSON MICROELECTRONICS12 citations74
US5595921AJan 21, 1997

Method for fabricating a fully depleted lateral transistor

SGS THOMSON MICROELECTRONICS8 citations73
US5496761AMar 5, 1996

Method of making junction-isolated high voltage MOS integrated device

SGS THOMSON MICROELECTRONICS9 citations73

SGS MICROELETTRONICA SPA

6 patents

VILLA FLAVIO

1 patent

Showing the top 50 of 51 patents by PatentIndex Score.