Inventor
VILLA FLAVIO
IT51 patents
⚠️ This page may combine multiple inventors who share the name “VILLA FLAVIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
27 patentsUS7294536B2Nov 13, 2007
Process for manufacturing an SOI wafer by annealing and oxidation of buried channels
ST MICROELECTRONICS SRL45 citations96
US6670257B1Dec 30, 2003
Method for forming horizontal buried channels or cavities in wafers of monocrystalline semiconductor material
ST MICROELECTRONICS SRL71 citations96
US6376291B1Apr 23, 2002
Process for manufacturing buried channels and cavities in semiconductor material wafers
ST MICROELECTRONICS SRL56 citations96
US6727479B2Apr 27, 2004
Integrated device based upon semiconductor technology, in particular chemical microreactor
ST MICROELECTRONICS SRL47 citations94
US7452713B2Nov 18, 2008
Process for manufacturing a microfluidic device with buried channels
ST MICROELECTRONICS SRL39 citations93
US6770471B2Aug 3, 2004
Integrated chemical microreactor, thermally insulated from detection electrodes, and manufacturing and operating methods therefor
ST MICROELECTRONICS SRL29 citations93
US6673593B2Jan 6, 2004
Integrated device for microfluid thermoregulation, and manufacturing process thereof
ST MICROELECTRONICS SRL42 citations93
US6992367B2Jan 31, 2006
Process for forming a buried cavity in a semiconductor material wafer and a buried cavity
ST MICROELECTRONICS SRL18 citations92
US6710311B2Mar 23, 2004
Process for manufacturing integrated chemical microreactors of semiconductor material
ST MICROELECTRONICS SRL30 citations92
US6693039B2Feb 17, 2004
Process for forming a buried cavity in a semiconductor material wafer and a buried cavity
ST MICROELECTRONICS SRL17 citations92
US6362070B1Mar 26, 2002
Process for manufacturing a SOI wafer with buried oxide regions without cusps
ST MICROELECTRONICS SRL23 citations92
US7071073B2Jul 4, 2006
Process for manufacturing low-cost and high-quality SOI substrates
ST MICROELECTRONICS SRL18 citations84
US5605850AFeb 25, 1997
Method for making a low-noise bipolar transistor
ST MICROELECTRONICS SRL17 citations82
US7754578B2Jul 13, 2010
Process for manufacturing a wafer by annealing of buried channels
ST MICROELECTRONICS SRL5 citations74
US6974693B2Dec 13, 2005
Integrated chemical microreactor, thermally insulated from detection electrodes, and manufacturing and operating methods therefor
ST MICROELECTRONICS SRL9 citations74
US6506663B1Jan 14, 2003
Method for producing an SOI wafer
ST MICROELECTRONICS SRL10 citations74
US6350657B1Feb 26, 2002
Inexpensive method of manufacturing an SOI wafer
ST MICROELECTRONICS SRL8 citations74
US5602417AFeb 11, 1997
Low-noise bipolar transistor operating predominantly in the bulk region
ST MICROELECTRONICS SRL12 citations74
US6529140B1Mar 4, 2003
Magnetic bi-dimensional position sensor
ST MICROELECTRONICS SRL9 citations71
US7906321B2Mar 15, 2011
Integrated semiconductor microreactor for real-time monitoring of biological reactions
ST MICROELECTRONICS SRL3 citations63
US7705416B2Apr 27, 2010
Method for forming horizontal buried channels or cavities in wafers of monocrystalline semiconductor material
ST MICROELECTRONICS SRL3 citations63
US6759132B2Jul 6, 2004
Method for the manufacture of electromagnetic radiation reflecting devices
ST MICROELECTRONICS SRL4 citations63
US6559035B2May 6, 2003
Method for manufacturing an SOI wafer
ST MICROELECTRONICS SRL5 citations63
US6455391B1Sep 24, 2002
Method of forming structures with buried regions in a semiconductor device
ST MICROELECTRONICS SRL3 citations63
US6909073B2Jun 21, 2005
Integrated device based upon semiconductor technology, in particular chemical microreactor
ST MICROELECTRONICS SRL3 citations61
US7009154B2Mar 7, 2006
Process for manufacturing integrated chemical microreactors of semiconductor material
ST MICROELECTRONICS SRL0 citations52
US6929968B2Aug 16, 2005
Integrated chemical microreactor, thermally insulated from detection electrodes, and manufacturing and operating methods therefor
ST MICROELECTRONICS SRL0 citations52
SGS THOMSON MICROELECTRONICS
16 patentsUS5530345AJun 25, 1996
An integrated hall•effect apparatus for detecting the position of a magnetic element
SGS THOMSON MICROELECTRONICS107 citations98
US5855693AJan 5, 1999
Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication
SGS THOMSON MICROELECTRONICS63 citations96
US6472244B1Oct 29, 2002
Manufacturing method and integrated microstructures of semiconductor material and integrated piezoresistive pressure sensor having a diaphragm of polycrystalline semiconductor material
SGS THOMSON MICROELECTRONICS46 citations93
US6171931B1Jan 9, 2001
Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication
SGS THOMSON MICROELECTRONICS28 citations93
US6131466AOct 17, 2000
Integrated piezoresistive pressure sensor
SGS THOMSON MICROELECTRONICS31 citations93
US5883009AMar 16, 1999
Method of fabricating integrated semiconductor devices comprising a chemoresistive gas microsensor
SGS THOMSON MICROELECTRONICS47 citations93
US5828124AOct 27, 1998
Low-noise bipolar transistor
SGS THOMSON MICROELECTRONICS28 citations93
US5756387AMay 26, 1998
Method for forming zener diode with high time stability and low noise
SGS THOMSON MICROELECTRONICS27 citations93
US6232140B1May 15, 2001
Semiconductor integrated capacitive acceleration sensor and relative fabrication method
SGS THOMSON MICROELECTRONICS30 citations92
US6104073AAug 15, 2000
Semiconductor integrated capacitive acceleration sensor and relative fabrication method
SGS THOMSON MICROELECTRONICS20 citations92
US5583365ADec 10, 1996
Fully depleted lateral transistor
SGS THOMSON MICROELECTRONICS24 citations92
US5434445AJul 18, 1995
Junction-isolated high-voltage MOS integrated device
SGS THOMSON MICROELECTRONICS25 citations92
US6417021B1Jul 9, 2002
Method of fabricating a piezoresistive pressure sensor
SGS THOMSON MICROELECTRONICS12 citations74
US4979008ADec 18, 1990
Vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components
SGS THOMSON MICROELECTRONICS12 citations74
US5595921AJan 21, 1997
Method for fabricating a fully depleted lateral transistor
SGS THOMSON MICROELECTRONICS8 citations73
US5496761AMar 5, 1996
Method of making junction-isolated high voltage MOS integrated device
SGS THOMSON MICROELECTRONICS9 citations73
SGS MICROELETTRONICA SPA
6 patentsUS4672235AJun 9, 1987
Bipolar power transistor
SGS MICROELETTRONICA SPA7 citations74
US4783693ANov 8, 1988
Driver element for inductive loads
SGS MICROELETTRONICA SPA8 citations73
US4682197AJul 21, 1987
Power transistor with spaced subtransistors having individual collectors
SGS MICROELETTRONICA SPA13 citations73
US4821136AApr 11, 1989
Power transistor with self-protection against direct secondary breakdown
SGS MICROELETTRONICA SPA3 citations63
US4663647AMay 5, 1987
Buried-resistance semiconductor device and fabrication process
SGS MICROELETTRONICA SPA3 citations62
US4886982ADec 12, 1989
Power transistor with improved resistance to direct secondary breakdown
SGS MICROELETTRONICA SPA6 citations55
VILLA FLAVIO
1 patentShowing the top 50 of 51 patents by PatentIndex Score.